The 1.3 pm InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs layer. Due to high optical confinement, this laser showed a high characteristic temperature To of 110We found that the temperature characteristic of semiconductor laser is influenced by the recombination SCH layer [ll. Small amount increase of the threshold carrier density by the temperature elevation rable increase of carrier density and then increase of recombination in the SCH layer. A e bandgap energy and higher refractive index SCH layer is very effective to reduce the carrier mbination and to maintain large optical confinement factor. We proposed a 1.3 pm wavelength laser re with a wide bandgap InGaP clad layer on a hetero-epitaxial InGaAs buffer layer and a GaAs te. To further improve the temperature characteristics, we introduced AlGaInAs SCH layer instead Figure. 1 and figure. 2 show the refractive index and optical confinement factor dependence of the ndgap wavelength for the InGaAsP and the AlGaInAs SCH layers. The AlGaInAs SCH layers shows a er refractive index and as a result higher optical confinement factor than InGaAsP SCH layers at the bandgap wavelength. Even at a short bandgap wavelength of SCH layer, the AlGaInAs SCH layer aintains relative high optical confinement factor. The laser wafer was grown by MOVPE on an n-GaAs substrate. Figure 3 schematically shows the ructure. To grow a 1 pm thick Ino,8Gao,2P wide band-gap clad layers we used a 2.4 pm thick itional graded InGaAs buffer layer and a 1 pm thick Iq,,G$,As buffer layer lattice matched to the thick Ino,4Gao,As strained quantum wells were sandwiched between two 100 nm ndoped-AlGaInAs SCH layers. Ridge waveguide lasers with a 5 pm stripe width were fabricated. The characteristic temperature To between 15°C and 50°C was measured for various bandgaps of layer as shown in Fig. 4. The InGaInP SCH layer lasers are also compared. The maximum To of the s SCH layer lasers occurs at 1.02 pm bandgap wavelength because of the trade off between the nfinement factor against the bandgap energy of SCH layer. To of the AlGaInAs SCH layer laser is K higher than that of InGaAsP SCH layer laser at same bandgap SCH layer.The injected current versus output power characteristic for various heat sink temperatures was asured as shown in Fig. 5. Laser have a 900 l m cavity length and as cleaved facets. To was 110 K between In summary, the InGaP clad laser with the AlGaInAs SCH layer instead of the InGaAsP SCH layer on a hetero-epitaxial InGaAs buffer layer. Due to higher optical confinement factor per well, d higher characteristic temperature To of 110 K than the laser with the InGaAsP SCH layer.et al., in Tech. Dig., CLEO/Pacific Rim' 95, FC2
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