1.3 µm InGaAs/GaAs strained quantum well lasers with InGaP cladding layer

Стимулированное излучение на длине волны 1.3 mum в метаморфной структуре InGaAs/InGaAsP с квантовыми ямами, выращенной на подложке Ge/Si (001)

“…Уже достаточно давно удалось создать такой лазер с относительно низкой пороговой плотностью тока [7].…”

Metamorphic InGaAs telecom lasers on GaAs

“…The first telecom laser device using the full flexibility of metamorphic virtual substrates was presented in 1994 by Uschida et al, using a graded InGaAs buffer layer, a InGaAs/InGaAsP QW and emitting at 1.27 µm [2]. Research activity remained low, but increased in the early 21 st century.…”

High temperature operation of 1.26 μm ridge waveguide laser with InGaAs metamorphic buffer on GaAs substrate

“…1.3 µm-range emissions from metamorphic InGaAs lasers have been reported [3]- [5]. These lasers used a compositionally graded InGaAs buffer layer.…”