Temperature dependence of the gain characteristics in a 1.31-pm GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98-pm GaInAs/GaAs laser. It was found that the low characteristic temperature T in the 1.31-pm laser was determined by the temperature dependence of the transparent current density 1, .INTRODUCTION : 1.31-pm GaInAsP/InP quantum-well semiconductor lasers have a poor temperature dependence of a threshold current compared with 0.98-pm GaInAs/GaAs lasers. So far, the characteristic temperature To was discussed by measuring the temperature dependences of three parameters, the differential gain dg/dJ for the current density J, the transparent current density Je and the internal
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