1998
DOI: 10.1109/3.709584
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Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers

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Cited by 18 publications
(9 citation statements)
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“…Similarly, the estimated red-shift coefficient of the EML is 0.092 nm/K. For the DFB laser and EML, the dependences of the lasing wavelength on the chip temperature can be expressed as equation (6). From Fig.…”
Section: Determination Of Chip Temperaturementioning
confidence: 98%
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“…Similarly, the estimated red-shift coefficient of the EML is 0.092 nm/K. For the DFB laser and EML, the dependences of the lasing wavelength on the chip temperature can be expressed as equation (6). From Fig.…”
Section: Determination Of Chip Temperaturementioning
confidence: 98%
“…The eye diagrams of the laser modules and single-mode fiber transmission experimental results at different chip temperatures are given in Sect. 6. It has been found that the optimal large-signal performances of the EML modules may be achieved at higher temperature.…”
Section: Introductionmentioning
confidence: 97%
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“…with increased current injection, the TM-mode absorption nulls rapidly move to short-wavelengths. However, for current over the threshold (~8 mA), the nulls gradually move back to the long-wavelength due to the thermal effect from lasing [12]. At the beginning for modulation, the incident light is spectrally aligned at the center wavelength of one among the absorption nulls with no bias current.…”
Section: External Modulation Using An Fp-ldmentioning
confidence: 99%
“…When a current is injected, all the absorption nulls are continuously shifted to shortwavelength by negative refi^active index change. But, for over the threshold current (ITH = -llmA), the nulls start to move in the opposite direction (to longwavelength) due to the thermal effect by lasing [10]. Here, it is worthy noting that the nulls are rapidly shifted to short-wavelength by a small amount of current fi-om 0 to 1 mA as shown in Fig.…”
mentioning
confidence: 82%