Experimental analysis of characteristic temperature in quantum-well semiconductor lasers

Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP–InP quantum-well lasers

“…Assuming the activation energy of Auger recombination coefficient DE to be 60 meV [5], and using the expression for N tr and effective masses for electrons and heavy holes in [9], N tr is calculated to be 7.46 · 10 17 cm 3 at 85°C, therefore the ratio of spontaneous radiative current to total recombination current is in the range of 0.443-0.591, resulting in an range of 169-197 K for the characteristic temperature of transparency current T 0 ðJ tr Þ at 85°C. The third term of (8) has been experimentally proved to be negligible [3,10], meantime it can be estimated theoretically.…”

“…According to another experimental result in [10], T 0 ðG 0 Þ is assumed to be infinity, Eq. (8) is simplified into the following forms:…”

High-temperature optical gain of 980 nm InGaAs/AlGaAs quantum-well lasers

“…[1][2][3] Our measurements were performed on ridge-waveguide single-quantum-well graded-index separate confinement heterostructure ͑GRINSCH͒ diode lasers. The In 0.2 Ga 0.8 As quantum well has a thickness of 8.5 nm and is centered in a 300 nm thick GRINSCH AlGaAs region with a confinement factor ⌫ϭ0.014.…”

Fabry–Pérot Oscillation and Room Temperature Lasing in Perovskite Cube‐Corner Pyramid Cavities

“…[49] Small 2018, 14, 1703136 The lasing threshold (P th ) increases from ≈92 µJ cm −2 to 2.2 mJ cm −2 as the sample temperature increases from 80 to 200 K (Figure 4d). This temperature-dependent trend can be well fitted by an empirical function (P th ∼e T/T0 ), [50,51] where T is the measurement temperature and T 0 is a characteristic temperature. A large T 0 results in a weak dependence of P th on the temperature, which indicates the good quality of a semiconductor laser.…”