Fabry–Pérot Oscillation and Room Temperature Lasing in Perovskite Cube‐Corner Pyramid Cavities

Abstract

Recently, organometal halide perovskite-based optoelectronics, particularly lasers, have attracted intensive attentions because of its outstanding spectral coherence, low threshold, and wideband tunability. In this work, high-quality CH NH PbBr single crystals with a unique shape of cube-corner pyramids are synthesized on mica substrates using chemical vapor deposition method. These micropyramids naturally form cube-corner cavities, which are eminent candidates for small-sized resonators and retroreflectors. The as-grown perovskites show strong emission ≈530 nm in the vertical direction at room temperature. A special Fabry-Pérot (F-P) mode is employed to interpret the light confinement in the cavity. Lasing from the perovskite pyramids is observed from 80 to 200 K, with threshold ranging from ≈92 µJ cm to 2.2 mJ cm , yielding a characteristic temperature of T = 35 K. By coating a thin layer of Ag film, the threshold is reduced from ≈92 to 26 µJ cm , which is accompanied by room temperature lasing with a threshold of ≈75 µJ cm . This work advocates the prospect of shape-engineered perovskite crystals toward developing micro-sized optoelectronic devices and potentially investigating light-matter coupling in quantum optics.

Ultrastable CsPbBr3 Perovskite Quantum Dot and Their Enhanced Amplified Spontaneous Emission by Surface Ligand Modification

“…Obvious structural changes can be observed around the contact regions of the interfaces. Especially, for interfaces of the OA ligands in contact with the CsBr/PbBr 2 plane of CsPbBr 3 , most of structural relaxation is observed at the PbBr 2 plane of CsPbBr 3 rather than at the CsBr plane . The calculated binding distances for the two interfaces are around 3.7 and 3.0 Å, respectively.…”

Recent Progress in Metal Halide Perovskite Micro‐ and Nanolasers

“…In the meantime, normalized two‐photon pumped (which could homogeneously inject the carriers) ASE threshold carrier concentrations versus temperature are shown in Figure c,d (right axis) with a fitted line, where , and T 0 is a characteristic temperature (a large T 0 results in a weak dependence of thresholds on the temperature), which indicates the good quality of a semiconductor laser. A characteristic temperature of T 0 = 35 K was obtained for the MAPbBr 3 microstructures (cube‐corner pyramid cavities) . Notably, the exponentially reduced PL intensity versus temperature indicated that, in order to accomplish the ASE process, more pump fluences are required to compensate for the loss of PL intensity, thus reflected as an increment of ASE threshold.…”

Amplified Spontaneous Emission and Random Lasing in MAPbBr3 Halide Perovskite Single Crystals

“…In most of the works, the main conclusion about the lasing nature of the emission is made based on the narrow line width and threshold behavior [ 2–5,7–16,18,19,21,22,25–27,30,32–43 ] of the emission. Rarely, the emission polarization was tested, [ 11,13,23,24,27,28,32–37,39 ] the direct observation of the light field distribution in the resonator was made, [ 10,13,14,16,18,19,21,34,39,41 ] or the laser emission directionality was observed. [ 22,27,31,34,36 ] To the best of our knowledge, the intensity correlation measurements above the lasing threshold was demonstrated only in ref.…”