Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers

Higashi, T.; Ogita, S.; Soda, H.; Kobayashi, H.; Kurakake, H.; Aoki, Osamu; Okazaki, N.

doi:10.1109/3.234454

Cited by 12 publications

(6 citation statements)

References 6 publications

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“…model calculations for asymmetrically coated devices. 9 If we speculate that the data obtained for the given accelerated aging conditions, which increase the aging process by about two orders of magnitude, may be extended to regular operation conditions we would conclude that during device lifetime the averaged reflectance at the position of emitters remains almost constant. This statement does not regard to local spots or defects that are not considered in this study.…”

Section: Resultsmentioning

confidence: 94%

“…Surface passivation technology and sealing of diode laser facets is addressed in numerous reports. [1][2][3][4][5][6][7][8] Nevertheless, the accurate attainment of certain designed R-values, in particular in asymmetrically coated structures, 9 as well as the stability of the achieved R-value for long-term device operation is of great importance, too. For R-analysis at laser facets there are several measurement categories of potential interest.…”

Section: Introductionmentioning

confidence: 99%

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<title>Microreflectance inspection of diode laser front facets</title>

et al. 2002

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We report on specular reflectivity measurements at the position of the waveguide at front facets of commercial diode laser arrays. Since the waveguide thickness in such semiconductor structures amounts about 1 µm an even better spatial resolution of the probe light spot is required. For this purpose, a micro-reflectance setup was designed and implemented. For re-locating the optically active region, e.g. after stepped-up operation time, we employ the photosensitivity of the active region by using the photocurrent induced by the probe beam for auto-alignment of the setup. We show for coated InGaAlAs/GaAs-'single chip' devices that during long-term operation the diode laser front facet reflectivity at the position of an emitter is almost constant with a slight tendency (about 0.002 at 633 nm) to increase. The results are explained in the framework of defect-induced refractive index changes within the semiconductor material close to the interface between waveguide and facet coating.

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Section: Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

<title>Microreflectance inspection of diode laser front facets</title>

et al. 2002

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“…Finally, the wafer was cleaved into chips. To enhance the laser performances a mirror coating technology [9] was applied. The nearly quarter wavelength ðl=4Þ antireflection (AR) coating reduces the reflectivity of the facets of the laser chips.…”

Section: Article In Pressmentioning

confidence: 99%

Single-step growth of InGaAsP/InP laser array on patterned InP substrate

Rakovics

Serényi

Püspöki

2004

Physica E: Low-dimensional Systems and Nanostructures

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“…This model was recently improved by including lateral heating and carrier diffusion [10]. In [11], the photon and carrier densities are calculated self-consistently and an optimum ratio of the facet reflectivities of an asymmetric resonator is determined. Nevertheless, carrier diffusion and thermal effects are omitted.…”

Section: Introductionmentioning

confidence: 99%

“…Low surface recombination is assumed, v 0 = v 1 = 5 × 10 4 cm s −1 .The inset shows the current-power characteristic of the device. The output power is calculated following(11). From the inset, one derives a theoretical threshold current of around 400 mA, and a device efficiency of 0.75 W A −1 .…”

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confidence: 99%

Self-consistent calculation of facet heating in asymmetrically coated edge emitting diode lasers

Menzel

1998

Semicond. Sci. Technol.

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A numerical model is introduced that self-consistently calculates the time dependent axial variations of photon density, carrier density and temperature in semiconductor lasers. The most important approximations are outlined. In order to illustrate the capability of the model, some results are shown for an asymmetrically coated DQW GaAs/GaAlAs edge emitting laser diode. The temperature rise at the facets and the corresponding profiles of carrier and photon density are calculated. The asymmetric behaviour of the profiles is discussed. The heating is calculated as a function of surface recombination velocity at the mirrors and as a function of injection current. The calculations provide insight into the process of facet heating and catastrophic optical damage. The calculations are confirmed by experimental investigations.

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Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers

Cited by 12 publications

References 6 publications

<title>Microreflectance inspection of diode laser front facets</title>

<title>Microreflectance inspection of diode laser front facets</title>

Single-step growth of InGaAsP/InP laser array on patterned InP substrate

Self-consistent calculation of facet heating in asymmetrically coated edge emitting diode lasers

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