PACS 73.30.+y, 73.40.Gk Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na 2 + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage (I-V) and capacitance-voltage measurements in the temperature range of 80 -320 K. The I-V characteristics are evaluated for both thermionic emission (TE) and thermionic-field emission theory. It is shown that at low temperatures even the field emission dominates the current in a given bias range. The barrier heights obtained for TE from the I-V measurements are in the range of 0.38 -0.49 eV with ideality factors of 1.08 -1.24. It is concluded that the junctions can be used for zero bias detector purposes.Introduction Low signal microwave applications require zero bias detector diodes. For this purpose Schottky diodes with a potential barrier height of about 0.4 -0.5 eV are required. (Depending on the series resistance, below a barrier height of about 0.3-0.4 eV Schottky diodes exhibit ohmic behaviour at room temperature [1, 2].) As the Schottky barrier height on n-type InP is usually in the range of 0.3 -0.7 eV [3 -6], n-type InP seems to be a good candidate for Schottky zero bias detector diodes. Moreover, InP exhibits high electron mobility which is another requirement for microwave applications. In this work Cr + Au and Ag Schottky junctions on n-type InP were fabricated and studied by electrical measurements. The studied junctions seem suitable for zero bias detectors.
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