InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH 3 , and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 1C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 1C. r
Structural and optical properties of GaInNAs/GaAs quantum structures grown by
metalorganic vapour phase epitaxy (MOVPE) are studied. The growth of arsenide–nitrides
by MOVPE is reviewed and compared to the other major growth technique, molecular
beam epitaxy. Post-growth thermal annealing and laser irradiation are employed and found
to affect GaInNAs quantum wells differently: with laser treatment no undesired blue-shift
of the photoluminescence peak is observed. The critical thickness for misfit dislocation
formation of GaAsN on GaAs is found to be about twice as large as the theoretical
prediction. GaAsN epilayers are also found to contain Ga vacancies in defect complexes.
The current status of experimental research on GaInNAs quantum dot structures is
reviewed. Self-organized and strain-induced GaInNAs quantum dots are grown
and their formation and optical properties are studied. The emission wavelength
of InGaAs quantum dots is extended by using InGaAs and GaInNAs barrier
layers.
Growth of InP self-assembled quantum dots on strained and strain-relaxed In x ( Al 0.6 Ga 0.4 ) 1 − x P matrices by metal-organic chemical vapor deposition J. Appl. Phys. 100, 043511 (2006)
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