Growth of InN by vertical flow MOVPE

Suihkonen, Sami; Sormunen, Jaakko; Rangel-Kuoppa, Victor-Tapio; Koskenvaara, H.; Sopanen, Markku

doi:10.1016/j.jcrysgro.2006.02.022

Cited by 34 publications

(40 citation statements)

References 17 publications

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“…But with further increased temperature, In droplets could be observed again. This has been attributes to N desorption at this high temperature, leaving metallic In on the surface [5].…”

Section: Resultsmentioning

confidence: 92%

“…They reported that increasing growth temperature roughened the surface and broadened the full-width at half maximum (FWHM) of XRC scans but also observed a decreasing carrier concentration. The effect of V/III ratio was studied by Suihkonen et al [5], they reported that the growth rate is not limited by the TMIn flow but reactive N in the reactor, a lack of which also leads to In droplet formation. in this paper, the effect of main growth parameters like temperature, pressure and V/III ratio on InN growth and droplet formation has been investigated precisely and the quality of MOCVD-grown InN films has been improved regarding their crystalline and electrical properties.…”

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confidence: 99%

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Dependence of InN properties on MOCVD growth parameters

Tuna

Behmenburg

Giesen

et al. 2011

Phys. Status Solidi C

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In order to optimize the growth conditions, the effect of the most important growth parameters such as growth temperature, pressure and V/III ratio on MOCVD‐grown InN was investigated. A series of samples were grown by changing the growth temperature from 500 °C to 550 °C at fixed growth pressure of 800 mbar and V/III ratio of 145000. An improvement of electrical properties with temperature increment was noted. The highest mobility of 1200 cm2/Vs was achieved at 550 °C with a bulk carrier concentration of 4.32 x 1018 cm‐3. The effect of V/III ratio on In droplet formation and on carrier concentration was also studied. At fixed temperature of 520 °C, reactor pressure of 200 mbar and at fixed NH3 flow of 3 slm, a rising TMIn flow from 1.2 µmol/min to 2.0 µmol/min results in a carrier concentration increment from 6.06 x 1018 cm‐3 to 1.33 x 1019 cm‐3and a decrement of the mobility from 430 cm2/Vs to 348 cm2/Vs. X‐ray diffraction measurements show that the intensity associated with In droplets on the surface is rising with increasing TMIn flow. The effect of reactor pressure on InN growth was also examined. A high sensitivity to growth pressure for crystalline quality of InN was observed. The full width at half maximum (FWHM) values of InN (0002) reflexes decreased with increasing reactor pressure. With increasing growth pressure above 200 mbar, FWHM of around 275 arcsec of InN (0002) was achieved. This FWHM value is the lowest reported in literature for MOCVD‐grown InN so far. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…But with further increased temperature, In droplets could be observed again. This has been attributes to N desorption at this high temperature, leaving metallic In on the surface [5].…”

Section: Resultsmentioning

confidence: 92%

mentioning

confidence: 99%

Dependence of InN properties on MOCVD growth parameters

Tuna

Behmenburg

Giesen

et al. 2011

Phys. Status Solidi C

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“…High-quality InN has been grown mainly by molecular beam epitaxy (MBE) [3][4][5][6] and metalorganic vapor phase epitaxy (MOVPE) [7][8][9]. The optimal substrate temperature (T s ) for InN growth is close to the decomposition temperature of the material, around 500°C [10].…”

Section: Introductionmentioning

confidence: 99%

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

Monteagudo-Lerma

Valdueza-Felip

Núñez-Cascajero

et al. 2016

Journal of Crystal Growth

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a b s t r a c tWe present the structural and optical properties of (0001)-oriented nanocolumnar films of InN deposited on c-sapphire substrates by radio-frequency reactive sputtering. It is observed that the column density and dimensions are highly dependent on the growth parameters of the buffer layer. We investigate four buffer layers consisting of (i) 30 nm of low-growth-rate InN, (ii) 30 nm of AlN deposited on the unbiased substrate (us), (iii) 30 nm of AlN deposited on the reverse-biased substrate (bs), and (iv) a 60-nm-thick bilayer consisting of 30-nm-thick bs-AlN deposited on top of 30-nm-thick us-AlN. Differences in the layer nucleation process due to the buffer layer induce variations of the column density in the range of (2.5-16) Â 10 9 cm À 2 , and of the column diameter in the range of 87-176 nm. Best results in terms of mosaicity are obtained using the bs-AlN buffer layer, which leads to a full width at half-maximum of the InN(0002) rocking curve of 1.2°. A residual compressive strain is still present in the nanocolumns. All samples exhibit room temperature photoluminescence emission at $ 1.6 eV, and an apparent optical band gap at $ 1.7 eV estimated from linear optical transmittance measurements.

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“…Bulk material is not available, but high quality films on sapphire ͑either directly or using various buffer layers͒ have been fabricated by molecular beam epitaxy ͑MBE͒ [1][2][3][4] and also by metal-organic chemical vapor deposition ͑MOCVD͒. 5,6 The properties of the material are greatly affected by the layer thickness and substrate material, as well as the growth temperature and stoichiometry. In this work, we apply positron annihilation spectroscopy to study the effect of different growth conditions, i.e., growth temperature, polarity and stoichiometry, film thickness, and substrate material on vacancy formation in InN grown by MBE.…”

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confidence: 99%