Tensile-strained GaAsN quantum dots on InP

Pohjola, P.; Hakkarainen, Tuula; Koskenvaara, H.; Sopanen, Markku; Lipsanen, Harri; Sainio, Jani

doi:10.1063/1.2719662

Cited by 5 publications

(4 citation statements)

References 16 publications

(19 reference statements)

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“…To date, however, a reliable method for the growth of tensile SAQDs has yet to be established. Unlike compressive SAQDs grown in the Stranski–Krastanov mode, the formation of dislocations tends to adversely affect SAQDs grown under tensile strain. , Few reports on the growth of tensile SAQDs with favorable properties exist, − and among conventional zinc blende semiconductors, only type-II GaAs/Ga(As)Sb SAQDs have shown optical activity under tension. , …”

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confidence: 99%

Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

et al. 2013

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Self-assembled quantum dots (SAQDs) grown under biaxial tension could enable novel devices by taking advantage of the strong band gap reduction induced by tensile strain. Tensile SAQDs with low optical transition energies could find application in the technologically important area of mid-infrared optoelectronics. In the case of Ge, biaxial tension can even cause a highly desirable crossover from an indirect- to a direct-gap band structure. However, the inability to grow tensile SAQDs without dislocations has impeded progress in these directions. In this article, we demonstrate a method to grow dislocation-free, tensile SAQDs by employing the unique strain relief mechanisms of (110)-oriented surfaces. As a model system, we show that tensile GaAs SAQDs form spontaneously, controllably, and without dislocations on InAlAs(110) surfaces. The tensile strain reduces the band gap in GaAs SAQDs by ~40%, leading to robust type-I quantum confinement and photoluminescence at energies lower than that of bulk GaAs. This method can be extended to other zinc blende and diamond cubic materials to form novel optoelectronic devices based on tensile SAQDs.

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confidence: 99%

Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

et al. 2013

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“…16,17 Only a few isolated reports of dislocation-free tensile-strained QDs exist. [18][19][20] Despite the merits of these alternative approaches, a QD self-assembly process based on the single-step SK or Volmer-Weber (VW) mechanisms would be preferable from the points of view of simplicity, scalability, and crystal quality.…”

Section: Introductionmentioning

confidence: 99%

Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly

Simmonds

2018

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV

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The self-assembly of epitaxial quantum dots on (001) surfaces, driven by compressive strain, is a widely used tool in semiconductor optoelectronics. In contrast, the growth of quantum dots on (111) and (110) surfaces has historically been a significant challenge. In most cases the strain relaxes rapidly via dislocation nucleation and glide before quantum dots can form. In this paper, we discuss a method for the reliable and controllable self-assembly of quantum dots on both (111) and (110) surfaces, where tensile strain is now the driving force. By showing that tensile-strained self-assembly is applicable to several material systems, we demonstrate the versatility of this technique. We believe that tensile-strained self-assembly represents a powerful tool for heterogeneous materials integration, and nanomaterial development, with future promise for band engineering and quantum optics applications.

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“…We choose the four QDs to have tensile strain, such that the heavy-hole states lie below the light-hole states, such as already demonstrated for GaAsN QDs embedded in InP. 34 Figs. 2 and 3 show the QD states of QDs 1, 2 and QDs 3,4, resp., that participate in the N00N-state generation process.…”

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Deterministic generation of many-photon GHZ states using quantum dots in a cavity

Erementchouk

2014

Quantum Information and Computation XII

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Compared to classical light sources, quantum sources based on N00N states consisting of N photons achieve an N -times higher phase sensitivity, giving rise to superresolution. 1-3 N00N-state creation schemes based on linear optics and projective measurements only have a success probability p that decreases exponentially with N , 4-6 e.g. p = 4.4×10 −14 for N = 20. 7 Feed-forward improves the scaling but N fluctuates nondeterministically in each attempt. 8,9 Schemes based on parametric down-conversion suffer from low production efficiency and low fidelity. 9 A recent scheme based on atoms in a cavity combines deterministic time evolution, local unitary operations, and projective measurements. 10 Here we propose a novel scheme based on the off-resonant interaction of N photons with four semiconductor quantum dots (QDs) in a cavity to create N00N states deterministically with p = 1 and fidelity above 90% for N 60, without the need of any projective measurement or local unitary operation. Using our measure we obtain maximum N -photon entanglement EN = 1 for arbitrary N . Our method paves the way to the miniaturization of N00N-state sources to the nanoscale regime, with the possibility to integrate them on a computer chip based on semiconductor materials.

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Tensile-strained GaAsN quantum dots on InP

Abstract: Growth of InP self-assembled quantum dots on strained and strain-relaxed In x ( Al 0.6 Ga 0.4 ) 1 − x P matrices by metal-organic chemical vapor deposition J. Appl. Phys. 100, 043511 (2006)

Cited by 5 publications

References 16 publications

Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly

Deterministic generation of many-photon GHZ states using quantum dots in a cavity

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