GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Bosund, Markus; Mattila, Pirkko; Aierken, Abuduwayiti; Hakkarainen, Tuula; Koskenvaara, H.; Sopanen, Markku; Airaksinen, Veli-Matti; Lipsanen, Harri

doi:10.1016/j.apsusc.2010.05.085

Cited by 44 publications

(22 citation statements)

References 14 publications

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“…12 Recently plasma enhanced atomic layer deposition (PEALD) method has been proved to be a promising growth technique. With its self-limiting digital growth mechanism, PEALD offers the opportunity to create precisely controlled thickness but is rarely used to grow AlN.…”

Section: 11mentioning

confidence: 99%

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

et al. 2015

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Section: 11mentioning

confidence: 99%

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

et al. 2015

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“…As a result of these properties, a significant amount of effort has been devoted towards the synthesis of epitaxial, polycrystalline, and amorphous grade AlN thin films [1,[4][5][6][7]. While high-temperature grown epitaxial AlN films are used in active electronic and opto-electronic device layers, polycrystalline and amorphous AlN films grown at CMOS-compatible temperatures are widely used as dielectrics and passivation layers for microelectronic devices [8,9]. AlN has also the potential of enhancing the III-V device performances when used as the passivation layer by eliminating the surface recombination and Fermi level pinning.…”

Section: Introductionmentioning

confidence: 99%

The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

Alevli

Ozgit

Dönmez

et al. 2011

Journal of Crystal Growth

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a b s t r a c tThe influence of N 2 /H 2 and ammonia as N source materials on the properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal source has been studied.The $-2Y grazing-incidence X-ray diffraction, high resolution transmission electron microscopy, and spectroscopic ellipsometry results on AlN films grown using either NH 3 or N 2 /H 2 plasma revealed polycrystalline and wurtzite AlN layers. The AlN growth rate per cycle was decreased from 0.84 to 0.54Å/cycle when the N source was changed from NH 3 to N 2 /H 2 . Growth rate of AlN remained constant within 100-200 1C for both N precursors, confirming the self-limiting growth mode in the ALD window. Al-Al bond was detected only near the surface in the AlN film grown with NH 3 plasma. AFM analysis showed that the RMS roughness values for AlN films grown on Si(100) substrates using NH 3 and N 2 /H 2 plasma sources were 1.33 nm and 1.18 nm, respectively. The refractive indices of both AlN films are similar except for a slight difference in the optical band edge and position of optical phonon modes. The optical band edges of the grown AlN films are observed at 5.83 and 5.92 eV for ammonia and N 2 /H 2 plasma, respectively. According to the FTIR data for both AlN films on sapphire substrates, the E 1 (TO) phonon mode position shifted from 671 cm À 1 to 675 cm À 1 when the plasma source was changed from NH 3 to N 2 /H 2 .

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“…When processed in the form of thin film, AlN finds applications as buffer layers for the growth of high quality materials [2,3], insulators for thin film transistors [4], interfacial layers for metal oxide semiconductor field effect transistors [5,6] and high-electron mobility transistors [7], surface passivation layers for surface channel field effect transistors [8] and sensitive GaAs structures [9], transparent substrates [10] and active layers [11] for extreme UV light-emitting diodes and photodetectors. AlN films are also used in the fabrication of surface acoustic wave devices [12], mechanical resonators [13], piezoelectric transducers [14], and gas sensors [15].…”

Section: Introductionmentioning

confidence: 99%

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

et al. 2012

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We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ammonia (NH 3 ). At 185°C, deposition rate saturated for TMA and NH 3 doses starting from 0.05 and 40 s, respectively. Saturative surface reactions between TMA and NH 3 resulted in a constant growth rate of~0.86 Å/cycle from 100 to 200°C. Within this temperature range, film thickness increased linearly with the number of deposition cycles. At higher temperatures (≥ 225°C) deposition rate increased with temperature. Chemical composition and bonding states of the films deposited at 185°C were investigated by Xray photoelectron spectroscopy. High resolution Al 2p and N 1s spectra confirmed the presence of AlN with peaks located at 73.02 and 396.07 eV, respectively. Films deposited at 185°C were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction. High-resolution transmission electron microscopy images of the AlN thin films deposited on Si (100) and glass substrates revealed a microstructure consisting of nanometer sized crystallites. Films exhibited an optical band edge at~5.8 eV and an optical transmittance of > 95% in the visible region of the spectrum.

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GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Cited by 44 publications

References 14 publications

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

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