An X-shaped filtered-arc-deposition (X-FAD) apparatus was developed in order to prepare hydrogen-free tetrahedral amorphous carbon (ta-C), which is a kind of diamond-like carbon (DLC), and metal film as a binding interlayer on the superhard alloy using a plasma beam irradiated from the same direction. First of all, the droplet-reduction performance was verified, and then, the appropriate duct-bias voltages and deposition rate were measured. Optima of duct biases for chromium (Cr) and DLC were found to be +25 and +15 V, respectively. From the result of X-ray diffraction analysis, it was found that Cr film that is prepared at a higher substrate-bias voltage was well crystallized and has less internal stress. The appropriate substrate bias for preparing ta-C was −100 to −200 V. DLC film was also prepared with substrate heating. It was found that ta-C could be prepared at a substrate temperature of less than 200 • C, and the film was graphitized at higher temperature. By following these results, 2.5-µm-thick ta-C film was prepared on a superhard alloy with an interlayer by X-FAD.Index Terms-Binding interlayer, chromium (Cr) film, diamond-like carbon (DLC), hydrogen-free tetrahedral amorphous carbon (ta-C), X-shape filtered-arc-deposition (X-FAD) system.
Tetrahedral amorphous-carbon (ta-C) without hydrogen is the hardest in diamond-like carbon (DLC), and expected of the application to coating on dry cutting tool for aluminum. The only method to prepare ta-C on an industrial scale is cathodic vacuum arc deposition. We have been developed T-shape filtered arc deposition (T-FAD) system with efficient droplet reduction. However, ta-C usually requires a binding interlayer between the workpiece and film, since the internal stress of the film is very high and adhesion to the substrate is not good. In the present study, in order to prepare DLC and metal film on the superhard alloy depositing from same direction, we developed on X-shape filtered arc deposition (X-FAD) apparatus. First of all, we verified the droplet reduction function, and then the appropriate duct bias voltages and deposition rate. DLC was also prepared with substrate heating. By considering and following these results, 1 a thick ta-C film was prepared on a superhard alloy with interlayer by X-FAD.
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