Articles you may be interested inScintillator high-gain avalanche rushing photoconductor active-matrix flat panel imager: Zero-spatial frequency xray imaging properties of the solid-state SHARP sensor structure Med. Phys. 39, 7102 (2012); 10.1118/1.4760989 2 ∕ 3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device J. Vac. Sci. Technol. B 28, C2D11 (2010); 10.1116/1.3271163 High dynamic range active pixel sensor arrays for digital x-ray imaging using a -Si : H J. Vac. Sci. Technol. A 24, 850 (2006); 10.1116/1.2192526 X-ray detection by direct modulation of an optical probe beam-Radsensor: Progress on development for imaging applications Rev. Sci. Instrum. 75, 3995 (2004); 10.1063/1.1790055X-ray-induced recombination effects in a-Se-based x-ray photoconductors used in direct conversion x-ray sensors J.The factors determining the x-ray sensitivity of HgI 2 and PbI 2 as direct detector materials for large area matrix addressed x-ray image sensors are described, along with a model to explain their different properties. The imaging studies are made on test arrays with 512ϫ512 pixels of size 100 m. The x-ray sensitivity and spatial resolution are reported, along with measurements of the various mechanisms that influence the sensitivity, such as charge collection, x-ray absorption, fill factor, and image lag. The spatial resolution of PbI 2 decreases with increasing film thickness, but this effect is not observed in HgI 2 . The x-ray response data are used to compare the sensitivity to the theoretical values for the ionization energy and to identify the various loss mechanisms. We find that the sensitivity of HgI 2 can be explained by a few small and well characterized loss factors. This material exhibits good spatial resolution, high fill factor, and high charge collection. PbI 2 films exhibit lower sensitivity, principally attributable to a very large image lag. We propose that the x-ray response of the two materials is distinguished by their different depletion layer properties, and present a model that accounts for the sensitivity, image lag, and spatial resolution of PbI 2 .

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Il-VI WORKSHOP PurposeThe purpose of this Workshop is to bring together the universities and the industrial and governmental communities that work with II-VI materials which include HgCdTe and other IR materials, Il-VI semiconductor alloys used for x-ray and y-ray detectors, ZnSe-based Il-VI photonic materials, and II:VI photorefractive materials. The Workshop aims at advancing the understanding of the physics and chemistry of these materials. Areas of InterestAreas covered include a broad range of disciplines: materials engineering, intrinsio?' and extrinsic defects including doping, surface sciences, manufacturing/processing, electrical, optical, and magneto-optical properties as well as interactions between them. Workshop FormatTo provide more discussion time, the Workshop program will consist of about 50 papers.When appropriate, invited, encouraged, and contributed papers with a common theme will be grouped for presentation and then followed by an extensive discussion period. Scheduled morning and afternoon breaks as well as lunch, provided as part of the workshop fee, can also be used as additional discussion time. To further promote informal discussion and interaction, the first two days will conclude with a wine and: cheese break accompanied by table-top displays from commercial vendors displaying products and services of interest to the community.

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