Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

Lee, E. Y.; James, R. B.; Olsen, Richard W.; Hermon, H.

doi:10.1007/s11664-999-0068-0

Cited by 46 publications

(17 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So far, there have been few comprehensive studies on compensation and trapping in CdTe and CdZnTe, [19][20][21] and, to our knowledge, no reports of the dependence of trapping on the position of the Fermi level. So far, there have been few comprehensive studies on compensation and trapping in CdTe and CdZnTe, [19][20][21] and, to our knowledge, no reports of the dependence of trapping on the position of the Fermi level.…”

Section: Charge States Of Sn Impuritiesmentioning

confidence: 99%

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

et al. 2007

View full text Add to dashboard Cite

We explored the growth and characteristics of CdTe doped with Sn to heighten our understanding of the role of deep levels on electrical compensation and trapping. We demonstrated, for the first time, the strong dependence of the Sn Cd charge state on the Fermi-level variation (2-3kT) in high-resistivity CdTe. The concentration of deep traps for electrons was determined by the number of doubly positively charged Sn 2+ atoms. Thermoelectric-effect spectroscopy and photovoltage measurements revealed the conversion of the Sn Cd defect from the electron Sn Cd 2+ trap to the hole Sn Cd 0 trap. The results agree well with the existence of a negative U-center in the Sn Cd 0/2+ defect. We also showed that the neutral Sn defect is responsible for the near midgap C-band → bound hole radiative transitions band with a maximum at 0.76 eV.

show abstract

Section: Charge States Of Sn Impuritiesmentioning

confidence: 99%

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

et al. 2007

View full text Add to dashboard Cite

show abstract

“…Through SIMPA fitting, we found four main trap peaks (T1~T4) in all the samples. The level labeled T1 has an activation energy of 0.06±0.01 eV below the conduction band minimum, with the trap type (electron or hole) revealed by thermoelectric effect spectroscopy (TEES) [20,21]. T1 could be assigned to a shallow donor originated at In dopant related point defect…”

Section: Resultsmentioning

confidence: 99%

Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties

Xu¹,

Wang²,

Fu³

et al. 2015

Journal of Crystal Growth

View full text Add to dashboard Cite

We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeds. The compensation between Cd In  defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.

show abstract

“…Recently developed high flux capable CdZnTe [4] has been characterized in high-flux scenarios [20] and charge transport properties, using pulse shape analysis of measured signals. The thermal ionization energies of the electron and hole traps were measured using thermoelectric emission spectroscopy and thermally stimulated conductivity in [21]. In [22], trap identification and lifetime determination have been done using a microwave cavity perturbation method in detector grade CdZnTe and HgI 2 .…”

Section: Related Workmentioning

confidence: 99%

A Learning-Based Physical Model of Charge Transport in Room-Temperature Semiconductor Detectors

Banerjee

Rodrigues²,

Vija³

et al. 2022

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

Cited by 46 publications

References 7 publications

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties

A Learning-Based Physical Model of Charge Transport in Room-Temperature Semiconductor Detectors

Contact Info

Product

Resources

About

Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

Cited by 46 publications

References 7 publications

Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe

Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe

Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties

A Learning-Based Physical Model of Charge Transport in Room-Temperature Semiconductor Detectors

Contact Info

Product

Resources

About

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe

Dependence of the Sn^0/2+ charge state on the Fermi level in semi-insulating CdTe