2015
DOI: 10.1016/j.jcrysgro.2014.09.039
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Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties

Abstract: We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeds. The compensation between Cd In  defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in … Show more

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Cited by 10 publications
(4 citation statements)
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“…The simultaneous multiple peak analysis (SIMPA) method was introduced to resolve the TSC spectra for a full characterization of defect levels. Defect-related parameters thermal activation energy ( E T i ), effectively collected charge ( Q T i ), initial defect density ( N T i ), defect-dependent coefficient ( D t i ), and capture cross section (σ n i ) were obtained by eqs –. , Details of mathematical analysis are described in Supporting Information section 2. The point defects in melt-grown CsPbBr 3 crystals were determined by combining the SIMPA fitting results of TSC spectra with the analysis of the distribution of elements.…”
Section: Theoretical Basismentioning
confidence: 99%
“…The simultaneous multiple peak analysis (SIMPA) method was introduced to resolve the TSC spectra for a full characterization of defect levels. Defect-related parameters thermal activation energy ( E T i ), effectively collected charge ( Q T i ), initial defect density ( N T i ), defect-dependent coefficient ( D t i ), and capture cross section (σ n i ) were obtained by eqs –. , Details of mathematical analysis are described in Supporting Information section 2. The point defects in melt-grown CsPbBr 3 crystals were determined by combining the SIMPA fitting results of TSC spectra with the analysis of the distribution of elements.…”
Section: Theoretical Basismentioning
confidence: 99%
“…As shown by Xu et al [16] the compensation of V Cd by In Cd leads to a low concentration of free electrons. This effect leads to the increase resistivity of CdZnTe crystal.…”
Section: Resultsmentioning
confidence: 84%
“…In a general case, In atoms can occupy V Cd in CdZnTe and it exists in form of donor-like ion In Cd . In turn, this leads to the decrease of mobility and to increase in resistivity [14,15]. This effect is explained by the thermogradient effect [10,11,16].…”
Section: Inter Academia 2014 -Global Research and Educationmentioning
confidence: 98%