Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation

Abstract

The enhancement of CdZnTe crystal resistivity by λ=1064nm Nd:YAG laser radiation was shown. This effect is explained by compensation of cadmium vacancy (VCd) by indium atoms due to a laser-induced temperature gradient around Te inclusions. The temperature gradient is caused by the selective absorption of the laser radiation by the Te inclusions.