A crack-free GaN∕AlN distributed Bragg reflector (DBR) incorporated with GaN∕AlN superlattice (SL) layers was grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition. Three sets of half-wave layers consisting of 5.5 periods of GaN∕AlN SL layers and GaN layer were inserted in every five pairs of the 20 pair GaN∕AlN DBR structure to suppress the crack generation. The grown GaN∕AlN DBRs with SL insertion layers showed no observable cracks in the structure and achieved high peak reflectivity of 97% at 399nm with a stop band width of 14nm. Based on the x-ray analysis, the reduction in the in-plane tensile stress in the DBR structure with insertion of SL layers could be responsible for the suppression of crack formation and achievement of high reflectivity.

Using variable angle spectroscopic ellipsometry, optical constants for AlAs (1.4-5.0 eV) are presented which are simultaneously compatible with measured data from four different samples. The below-gap index values are compatible with published prism measured values. The second derivative spectrum are compatible with published values above the direct band gap. The AlAs spectra is Kramers-Kromg self-consistent over the measured range and is compatible with published values from 0.6 to 1.4 eV. The optical constants for thin ((50 A) GaAs caps on AlAs are shown to be different from bulk GaAs values and require special consideration when fitting ellipsometric data. For the thin GaAs caps, the Et and E,+A, critical-point structure is shifted to higher energies as previously observed for GaAs quantum wells. Bulk AlAs optical constants are shown to be different from those of a thin (-20 A) AlAs barrier layer embedded in GaAs. The thin barrier layer exhibits a highly broadened critical-point structure. This barrier broadening effect (AlAs) and the thin cap shifting effects (GaAs) have implications for in situ growth control schemes which make use of the E, and E, +A, critical-point region. 0 1995 American Institute of Physics.

GaN-based vertical-cavity surface emitting laser with 3 λ cavity and hybrid mirrors, consisting of the 25 pairs AlN∕GaN dielectric Bragg reflector and the 8 pairs Ta2O5∕SiO2, was fabricated. The laser action was achieved under the optical pumping at room temperature with a threshold pumping energy density of about 53mJ∕cm2. The laser emits 448 nm blue wavelength with a linewidth of 0.25 nm and the laser beam has a degree of polarization of about 84%.

Room-temperature optically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) were demonstrated by laser lift-off. A VCSEL was fabricated by combining a GaN-based cavity with two dielectric distributed Bragg reflectors: SiO2/TiO2 and SiO2/Ta2O5. The Q factor of the VCSEL is 518 indicating a good interfacial layer quality of the structure. The laser emits blue-violet wavelength light at 414 nm under optical pumping at room temperature with a threshold pumping energy of 270 nJ. The laser emission has a narrow linewidth of 0.25 nm and a degree of polarization of 70%. The laser emission patterns clearly indicate a vertical lasing action of the VCSEL.

Self-assembled InGaN quantum dots (QDs) were grown by metal-organic chemical vapour deposition with growth interruption at low V/III ratio and low growth temperature on sapphire substrates. The effects of the interruption time on the morphological and optical properties of InGaN QDs were studied. The results show that the growth interruption can modify the dimension and distribution of InGaN QDs, and cause the QD emission wavelength to blue shift with increasing interruption time. A density of InGaN QDs of about 4.5 × 10(10) cm(-2) with an average lateral size of 11.5 nm and an average height of 1.6 nm can be obtained by using a growth interruption time of 60 s.

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