Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflector

Kao, Chih−Chiang; Peng, Yu-Chun; Yao, H. H.; Tsai, Jang-Zern; Chang, Ya-Wen; Chu, Jhih‐Wei; Huang, H. W.; Kao, Tsung Sheng; Lu, Tien−Chang; Kuo, Hao‐Chung; Wang, S. C.; Lin, Chia−Feng

doi:10.1063/1.2032598

Cited by 73 publications

(33 citation statements)

References 14 publications

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“…A dominant laser emission line at 448.9 nm appears above the threshold pumping energy. The threshold density of this hybrid DBR VCSEL is relatively lower than that of our previous report [28], which may originate from the improvement of the reflectivity of the epitaxially grown AlN/GaN-based DBR inserted with SL layers. The laser emission spectral linewidth reduces as the pumping energy rises above the threshold energy, and approaches 0.17 nm at the pumping energy of 82.5 nJ.…”

Section: B Characteristics Of Optically Pumped Gan-based Vcselcontrasting

confidence: 42%

“…The third one is the VCSEL structure combining an epitaxially grown DBR and a dielectric-type DBR that compromises the advantages and disadvantages of the aforementioned two VCSEL structures [ Fig. 3(c)] [28], [29]. The hybrid DBR VCSEL can eliminate the complex process and ensure the feasibility of coplanar contacts with dielectric DBR mesas for the future electrically pumped VCSEL applications.…”

Section: Difficulty In Fabrication Of Nitride-based Vcselmentioning

confidence: 99%

“…In our previous study, we also demonstrated optically pumped GaN-based VCSELs by employing dielectric DBR VCSEL [26], [27] and hybrid DBR VCSEL structures [28], [29]. The advantages and drawbacks of these different VCSEL structures will be discussed in Section II.…”

Section: Introductionmentioning

confidence: 99%

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Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Chen

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaNbased VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7• with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 × 10 −2 was measured.Index Terms-Distributed Bragg reflector (DBR), GaN, electrical pumping, superlattice, vertical-cavity surface-emitting laser (VCSEL).

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Section: B Characteristics Of Optically Pumped Gan-based Vcselcontrasting

confidence: 42%

Section: Difficulty In Fabrication Of Nitride-based Vcselmentioning

confidence: 99%

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Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Chen

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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“…[34][35][36][37][38][39][40] The later consists of growing the n-side DBR (n-DBR) epitaxially, while dielectric layers are deposited for the p-side DBR (p-DBR). Dual dielectric DBR VCSELs, on the other hand, have dielectric n-DBRs and p-DBRs.…”

Section: Motivation For Iii-nitride Tunnel Junction Intracavity Contactsmentioning

confidence: 99%

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

et al. 2016

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We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 µm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 µW with a threshold current density of ~3.5 kA/cm 2 , while the ITO VCSELs show peak powers of ~80 µW and threshold current densities of ~7 kA/cm 2 .

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“…Therefore, a large number of DBR pairs (usually 25-40 pairs) are required to achieve high reflectivity, leading to epitaxial challenges in many material systems. This problem is one of the main impediments in the development of VCSELs and other DBR-based optoelectronic devices in many wavelength regimes, such as blue-green and mid-infrared [31,32]. In addition, during the material growth process the DBR layer thickness and composition must be very precisely controlled in order to achieve high reflectivity.…”

Section: Introductionmentioning

confidence: 99%

Session V.A (DeBartolo Hall Room 102) Optoelectronic devices

2013

71st Device Research Conference

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Subwavelength High-Contrast Grating (HCG) and its Applications in Optoelectronic Devicesby Ye Zhou Doctor of Philosophy in Engineering -Electrical Engineering and Computer SciencesUniversity of California, BerkeleyProfessor Constance J. Chang-Hasnain, ChairOptical grating is a research topic with a long history. It has been extensively studied over the years due to its various applications in holography, spectroscopy, lasers, and many other optoelectronic devices. In this dissertation, we present a novel single-layer subwavelength high-index-contrast grating (HCG) which opens a new era in the study of grating. HCGs can serve as surface normal broadband (∆λ/λ ~35%), high-reflectivity (>99%) mirrors, which can be used to replace conventional distributed Bragg reflectors (DBRs) in optical devices. Different designs of HCGs can also serve as narrow band, surface emitting, high-quality (Q) factor optical resonators or shallow angle reflectors. In this dissertation, we will review the recent advances in high-index-contrast grating and its applications in optoelectronic devices, including vertical-cavity surface-emitting lasers (VCSELs), high-Q optical resonators, and hollow-core waveguides.We first present a novel HCG-based VCSEL where the conventional DBR mirror is replaced with a HCG-based mirror. A systematic and comprehensive review of the experimental and numerical simulation results is presented to demonstrate many desirable 2 attributes of HCG-based VCSELs, including polarization selection, transverse mode control and a large fabrication tolerance.Next, we present an ultra-fast tuning, HCG-based tunable VCSEL. By integrating a mechanically movable actuator with a single-layer HCG as the VCSEL top mirror, precise, wide continuous wavelength tuning (~18 nm) was achieved at room temperature.The small footprint of the HCG enables each of the mechanical actuator dimensions to be scaled down by at least a factor of 10, resulting in a greater than 1000 times reduction in mass, and an increase in the mechanical resonant frequency. It also allows for a recordfast, HCG-based tunable VCSEL with a tuning time in the ~10 ns range to be obtained.Besides the HCG-based VCSELs/tunable VCSELs, we also present a HCG-based surface normal high-Q resonator with a simulated Q-factor as large as 500,000 and an experimentally measured Q-factor of ~14,000. The unique feature of a high-Q with surface normal emission is highly desirable, as the topology facilitates a convenient and high output coupling with free-space or fiber optics. This feature is promising for array fabrication of lasers and filters, as well as high throughput sensor arrays.In addition, we propose a HCG-based hollow-core waveguide design with an ultralow propagation loss of <0.01dB/m, three orders of magnitude lower than the lowest loss of the state-of-art chip-scale hollow waveguides. This novel HCG hollow-core waveguide design will serve as a basic building block in many chip-scale integrated photonic circuits, enabling system-level applications including o...

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Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflector

Cited by 73 publications

References 14 publications

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

Session V.A (DeBartolo Hall Room 102) Optoelectronic devices

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