Effect of growth conditions on the Al composition and quality of AlGaN film

Huang, G. S.; Yao, H. H.; Kuo, Hao‐Chung; Wang, S. C.

doi:10.1016/j.mseb.2006.08.064

Cited by 21 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Al marker layer may also play a role. The Al adatom diffusion length is expected to be smaller than that of Ga on the (121̅0) a -plane sidewall (along the (0001) c -axis). ,, The relatively immobile Al adatoms and low growth rate at the trench sidewall promote a N-rich surface, which can lead to the formation of Mg 2 N 3 compounds. , We note that purple spheres in regions that do not contain Mg are background counts in the APT mass spectrum and represent the background noise level. For example, purple spheres to the left of the sidewall in Figure a are predominantly background counts, as determined by the absence of a Mg peak in the mass spectrum shown in Supporting Information Figure S4d.…”

Section: Resultsmentioning

confidence: 99%

“…The Al adatom diffusion length is expected to be smaller than that of Ga on the (121̅ 0) a-plane sidewall (along the (0001) c-axis). 43,60,61 The relatively immobile Al adatoms and low growth rate at the trench sidewall promote a N-rich surface, which can lead to the formation of Mg 2 N 3 compounds. 62,63 We note that purple spheres in regions that do not contain Mg are background counts in the APT mass spectrum and represent the background noise level.…”

Section: ++mentioning

confidence: 99%

See 1 more Smart Citation

Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions

Chang

Wang

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Nonplanar GaN p–n junctions formed by selective area regrowth were analyzed using pulsed laser atom probe tomography. Dilute Al marker layers were used to map the evolution of the p-GaN growth interface, enabling extraction of time-varying growth rates for nonpolar, semipolar, and polar surfaces from the trench edge to the center, respectively. The Mg dopant concentration is facet-dependent and varies inversely with the growth rate for the semipolar facets that grow rapidly away from the trench sidewalls. The negligible growth on the vertical sidewall of the trench coincides with an order of magnitude higher Mg concentration and substantial clustering of likely inactive dopants. A high Mg concentration is also observed near the regrowth interface of polar and semipolar planes, which we attribute to etching damage. We conclude that device fabrication processes employing selective area regrowth on nonplanar interfaces should consider both the spatial and temporal dependencies of growth rate that lead to nonuniform doping and explore growth conditions that could reduce variations in growth rate when nonuniform doping would adversely affect device performance.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: ++mentioning

confidence: 99%

Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions

Chang

Wang

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…This leads to the growth of AlGaN films with a high density of defects. These defects trap carriers, acting as non-radiative recombination centers, and consequently affect the optical and electronic properties of the elaborated layers [15][16][17][18][19][20][21][22][23]. However, several methods have been suggested to reduce the effects associated with mismatches between the AlGaN layer and sapphire substrate, e.g., the deposition of a low-temperature buffer layer of GaN or AlN on the substrate [24] and the epitaxial lateral overgrowth [6].…”

Section: Introductionmentioning

confidence: 99%

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

Bouzidi

Alshammari

Soltani

et al. 2021

Materials Science and Engineering: B

View full text Add to dashboard Cite

“…Indeed, it is known that incorporation of high Al composition into GaN will deteriorate the material quality and attenuate the luminescence intensity of AlGaN. 67 Currently, for the AlGaN MQWs with 37% and 50% Al, this is the best quality we can have so far. With more advanced growth processes, we believe the material quality can be improved and the device performance can also be enhanced.…”

Section: Resultsmentioning

confidence: 99%

“…Note that the lasing spikes are not as obvious as those in the previous studies, which may be attributed the intrinsic defects of AlGaN. ,,,, Excessive transition through defect states will cause luminescence attenuation in the deep-ultraviolet range and further affect the optical gain in the formation of closed loops. Indeed, it is known that incorporation of high Al composition into GaN will deteriorate the material quality and attenuate the luminescence intensity of AlGaN . Currently, for the AlGaN MQWs with 37% and 50% Al, this is the best quality we can have so far.…”

Section: Resultsmentioning

confidence: 99%

Anderson Localization Enabled Spectrally Stable Deep-Ultraviolet Laser Based on Metallic Nanoparticle Decorated AlGaN Multiple Quantum Wells

Shen

et al. 2020

ACS Nano

View full text Add to dashboard Cite

Random lasers exhibit many exotic properties, including chaotic behavior, light localization, broad angular emission, and cost-effective fabrication, which enable them to attract both scientific and industrial interests. However, before the realization of their potential applications, several challenges still remain including the underlying mechanism and controllability due to their inherent multidirectional and chaotic fluctuations. Through more than two decades of collaborative efforts, the discovery of Anderson localization in random lasers provides a plausible route to resolve the difficulties, which enables one to tailor the number of lasing modes and stabilize the emission spectra. However, the related studies are rather rare and only restricted to limited wavelengths. In this study, based on enhanced Anderson localization assisted by surface plasmon resonance, spectrally stable deepultraviolet lasing action in AlGaN multiple quantum wells (MQWs) is demonstrated. Our work serves as firm evidence to demonstrate the underlying mechanism of stabilized deep-ultraviolet random laser action that multiple scattering of a light beam in a disordered medium can induce Anderson localization similar to electron behavior. This feature covers the whole spectral range, and it is a universal phenomenon of an electromagnetic wave. Notably, stabilized deep-ultraviolet random laser action has not been demonstrated in all previous studies, even though it has great academic interest and potential application in many areas from environmental protection to biomedical engineering.

show abstract

Effect of growth conditions on the Al composition and quality of AlGaN film

Cited by 21 publications

References 12 publications

Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions

Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

Anderson Localization Enabled Spectrally Stable Deep-Ultraviolet Laser Based on Metallic Nanoparticle Decorated AlGaN Multiple Quantum Wells

Contact Info

Product

Resources

About