InGaN self-assembled quantum dots grown by metal–organic chemical vapour deposition with growth interruption

Abstract

Self-assembled InGaN quantum dots (QDs) were grown by metal-organic chemical vapour deposition with growth interruption at low V/III ratio and low growth temperature on sapphire substrates. The effects of the interruption time on the morphological and optical properties of InGaN QDs were studied. The results show that the growth interruption can modify the dimension and distribution of InGaN QDs, and cause the QD emission wavelength to blue shift with increasing interruption time. A density of InGaN QDs of about 4.5 × 10(10) cm(-2) with an average lateral size of 11.5 nm and an average height of 1.6 nm can be obtained by using a growth interruption time of 60 s.

Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method

“…They can reach energetically appropriate positions and approximate the thermodynamic equilibrium states to relax the stress. 17) Then, the surface of InGaN becomes fluctuant à E-mail address: wanglai@tsinghua.edu.cn and InGaN QDs are generated. The bond strength of In-N (7.7 eV/atom) is weaker than that of Ga-N (8.9 eV/atom), so the indium adatoms are expected to migrate more easily than Ga adatoms and dominate the migration process, resulting in a higher indium composition of QDs than that of the planar epilayer.…”

Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy

“…Recently, people have started to focus on the InGaN-based nanostructures, including quantum dots (QDs), nanowires, and nanorods. [3][4][5][6][7] These nano-structures are believed able to provide better device performance and more new applications. [8][9][10][11] The growth of InGaN-based nano-structures faces many challenges, especially the high dislocation density in InGaN/ GaN system.…”

Growth behaviour of InGaN/GaN self‐assembled quantum dots with different growth conditions in horizontal MOCVD

“…Compared with GaAs based devices, a decrease in threshold current density is accomplished in III-nitride quantum structure material LDs due to the high transparency current density originating from the large selective mass. The InGaN quantum dots (QDs) structure is a low dimension confinement structure that has many unique physical properties [6][7][8]. InGaN QDs can be used in the active region of LDs and LEDs to improve their performance and the temperature stability of devices [9,10].…”