Growth behaviour of InGaN/GaN self‐assembled quantum dots with different growth conditions in horizontal MOCVD

Abstract

InGaN/GaN self‐assembled quantum dots (QDs) were grown on (0001) sapphire substrates by low pressure metalorganic chemical vapor deposition. The growth behavior of the InGaN/GaN QDs was examined under different experimental conditions. The InGaN/GaN QDs were formed in Stranski‐Krastanow growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer‐Weber growth mode by the periodic interruption of the MO sources. In addition, a quantum ring (QRs) structure was confirmed during the formation of InGaN QDs. The In content in the InGaN QDs appeared to increase with decreasing temperature. The photoluminescence spectrum (PL) showed peaks for the GaN buffer layer and the InGaN QDs layer at 362.2 nm (3.41 eV) and between 420–460 nm (2.96–2.70 eV), respectively. The composition of InGaN QDs was estimated from the PL peak position to be In0.12‐0.15Ga0.88‐0.85N. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Growth and characterization of self‐assembled low‐indium composition InGaN nanodots by alternate admittance of precursors

“…The diameter and height of InGaN nanodots are similar to those of sample D, but the densities of the holes called “nanorings” increase. In samples B, C, and D, nanorings can also be observed, but the densities are 1–2 orders of magnitude lower than those of samples F and G. Similar structure was also observed by Jun et al 13. As the details show in Fig.…”

“…This method is also used to grow InN and GaN dots with stress relaxation between the substrate and grown materials by the formation of small islands rather than dislocations 11, 12. InGaN dots were also grown by periodic injection of only one precursor 13. However, to the knowledge of the authors, there are no publications on growing InGaN nanodots by alternate admittance of precursors.…”

Theoretical study on critical thicknesses of InGaN grown on (0001) GaN

“…Therefore, it can be concluded that the SK mode is not appropriate for growing low indium composition InGaN quantum dots on (0 0 0 1) GaN and the wetting layer should be dislodged. The Volmer-Weber (VW) growth mode without wetting layer is more appropriate [28,29]. When indium composition is higher than 27%, the critical thickness for new dislocation generation is much thinner than that for three-dimensional growth and dislocations generate very easily.…”

Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method

“…However, most studies are focused on the QDs emitting blue or violet light. [4][5][6][7][8][9] Investigations on high-indium-composition QDs emitting longer wavelengths are much fewer. 1,10,11) For InGaN-based green and red light emitting devices, QWs are suffering from poor material quality and the quantum-confined Stark effect induced by the large lattice mismatch.…”