Growth and characterization of self‐assembled low‐indium composition InGaN nanodots by alternate admittance of precursors

Abstract

Low-indium composition InGaN nanodots are grown on GaN/ Al 2 O 3 by alternate admittance of triethylgallium (TEGa), trimethylindium (TMIn), and ammonia (NH 3 ) using metalorganic vapor phase epitaxy. Since the lattice mismatch between metal (Ga, In) and GaN is large during the admittance of group III precursors and the alternate admittance of precursors can enhance the surface diffusion of adatoms, it is believed that the growth mode of InGaN nanodots is the Volmer-Weber mode. The admittance time is optimized and injecting TMIn with NH 3 can increase indium composition. The ultraviolet photoluminescence spectra exhibit small temperature-dependent redshift and a sensitive intensity change dependent on indium composition.

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

“…In an earlier work, we utilized precursor–alternate–admittance method to grow WL‐free InGaN QDs because In and Ga metal atoms have a much larger lattice mismatch with GaN. [ 55 ] However, the indium composition in these InGaN QDs was very low, so this method could only produce VW QDs with wavelength below 400 nm. Herein, we first use these VW QDs as the base layer to inductively form longer wavelength QDs by following the conformal growth of an upper InGaN layer.…”

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

“…5 InGaN QDs on GaN have been obtained by both molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) by either direct island formation (Volmer-Weber, VW growth mode) or wetting layer followed by island formation (Stranski-Krastanov, SK growth mode). [6][7][8][9] Near-infrared photoluminescence (PL) emission was reported for InN QDs on GaN with size dependent peak energy, blue shifting from 0.78 to 1.07 eV when the QD height was reduced from 32.4 to 6.5 nm. 10 We have recently started the growth of InN QDs on high-In-content InGaN layers by plasma-assisted (PA) MBE and found excellent optical performance optimized for intermediate band solar cells and demonstrated applications in the fields of bio-sensors and ion-selective electrodes.…”

Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

“…grew the low-indium-composition by alternate admittance of group-III and group-V precursors instead of the conventional SK growth mode. [18] As shown in Fig. 2, in each period of alternate admittance of precursors, triethylgallium (TEGa), and trimethylindium (TMIn) were first injected without ammonia (NH 3 ) for a few seconds, and then they were shut off and NH 3 was injected for another few seconds.…”