InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal-organicvapor phase epitaxy (MOVPE), which is challenge due to the lack of 、itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.