Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO(5nmthick), a maximum drain current of 1.05A∕mm, a transconductance of 714mS∕mm, and a peak mobility of 1300cm2∕Vs have been achieved, the highest ever reported for III-V inversion-channel devices of 1μm gate length.

High HfO 2 was deposited on n-type GaN ͑0001͒ using atomic layer deposition with Hf͑NCH 3 C 2 H 5 ͒ 4 and H 2 O as the precursors. Excellent electrical properties of TiN / HfO 2 / GaN metal-oxide-semiconductor diode with the oxide thickness of 8.8 nm were obtained, in terms of low electrical leakage current density ͑ϳ10 −6 A/cm 2 at V FB +1 V͒, well behaved capacitance-voltage ͑C-V͒ curves having a low interfacial density of states of 2 ϫ 10 11 cm −2 eV −1 at the midgap, and a high dielectric constant of 16.5. C-V curves with clear accumulation and depletion behaviors were shown, along with negligible frequency dispersion and hysteresis with sweeping biasing voltages. The structural properties studied by high-resolution transmission electron microscopy and x-ray reflectivity show an atomically smooth oxide/GaN interface, with an interfacial layer of GaON ϳ1.8 nm thick, as probed using x-ray photoelectron spectroscopy.

No abstract

Atomic-layer-deposited Al2O3 on In0.53Ga0.47As with short air exposure between the oxide and semiconductor deposition has enabled the demonstration of nearly ideal frequency-dependent and quasistatic capacitance-voltage (C-V) characteristics. The excellent quasistatic C-V characteristics indicate a high efficiency of 63% for the Fermi-level movement near the midgap. A low mean interfacial density of states (D¯it)∼2.5×1011 cm−2 eV−1 was determined under 1 MHz using a charge pumping method, which was also employed to probe the depth profile of bulk traps (Nbt) and the energy dependence of Dit at 50 kHz: a low Nbt∼7×1018 cm−3 and a Dit of (2–4)×1011 cm−2 eV−1 in the lower half of the band gap and a higher Dit of ∼1012 cm−2 eV−1 in the upper half of the band gap. The employment of charge pumping method has given a more accurate determination of Dit, which is usually overestimated using other commonly methods such as the Terman, conductance, and high-low frequencies due to the influence of weak inversion at room temperature.

Articles you may be interested inEffect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric J. Vac. Sci. Technol. B 29, 040601 (2011); 10.1116/1.3597199 Self-aligned inversion-channel In 0.2 Ga 0.8 As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al 2 O 3 / Ga 2 O 3 ( Gd 2 O 3 ) as the gate dielectric J. Vac. Sci. Technol. B 29, 03C122 (2011); 10.1116/1.3565057 Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Appl. Phys. Lett. 91, 052902 (2007); 10.1063/1.2767177 Enhancement-mode InP n -channel metal-oxide-semiconductor field-effect transistors with atomic-layerdeposited Al 2 O 3 dielectrics Appl. Phys. Lett. 91, 022108 (2007); 10.1063/1.2756106Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition