Herein, a high‐performance β‐gallium oxide (β‐Ga2O3) metal–oxide–semiconductor field‐effect transistor (MOSFET) on sapphire substrate with a high breakdown voltage of more than 800 V and a high‐power figure of merit of more than 86.3 MV cm−2 is demonstrated. The atomic force microscopy (AFM) image and Raman peaks that are first characterized to ensure a nanomembrane with high quality are used for the device fabrication. A saturation drain current of 231.8 mA mm−1, an RON,sp of 7.41 mΩ cm2, an ON/OFF ratio of 108, and a subthreshold swing of 86 mV dec−1 are obtained at a channel doping concentration of 4.47 × 1017 cm−3 and a source‐to‐drain distance of 11.4 μm. Furthermore, a high breakdown voltage over 800 V is also achieved, corresponding to a record‐high direct current (DC) power figure of merit of 86.3 MW cm−2. Technology computer aided design (TCAD) simulation is also performed to extract the distribution of the electric field along the β‐Ga2O3 channel surface.

We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel–Poole trap-assisted emission model. Moreover, a breakdown voltage of 300 V was obtained in Fluorinert ambient with an average electric field of 3 MV/cm in Mo/β-Ga2O3 Schottky barrier diode. The effects of the surface states, on the electric field distribution, were also analyzed by TCAD simulation. With the negative surface charge densities increasing, the peak electric field reduces monotonously. Furthermore, the Schottky barrier height inhomogeneity under forward bias was also discussed.

We have demonstrated the epitaxial growth of a β-(Al0.08Ga0.92)2O3 film on a β-Ga2O3 (010) substrate through pulsed laser deposition. The temperature-dependent electrical characteristics of Au/Ni/β-(Al0.08Ga0.92)2O3 Schottky diodes were investigated in the temperature range of 300–573 K, using thermionic emission theory to calculate the Schottky diode parameters. The barrier height ϕb was found to increase, while the ideality factor n and the series resistance Rs were found to decrease with increasing temperatures. The calculated values of ϕb and n varied from 0.81 eV and 2.29 at 300 K to 1.02 eV and 1.65 at 573 K. The temperature-dependent I-V characteristics of the Schottky diode have shown the Gaussian distribution, yielding a mean barrier height of 1.23 eV and a standard deviation of 0.147 V, respectively. A modified Richardson plot of ln(Is/T2)−(q2σs2/2k2T2) versus q/2kT gives ϕb0¯ and A* as 1.24 eV and 44.3 A cm−2 K−2, showing the promise of Ni/β-(AlGa)2O3 as a Schottky diode rectifier.

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In this paper, the hybrid β-Ga 2 O 3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga 2 O 3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R 254 nm /R 400 nm up to 1.26 × 10 3 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga 2 O 3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.

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In this letter, we fabricated the mechanically exfoliated β-Ga2O3/GaN pn heterojunction diode and carried out the electrical characteristics measurements. At room temperature, the diode shows a good rectifying property, with a turn-on voltage of 3.9 V–4.6 V and rectifying ratio greater than 106 @ ±20 V. From the 1/C2 vs V plot, the built-in voltage is determined to be 3.4 V and the energy band diagram of the heterojunction is also constructed. According to the temperature dependent I-V cures, three different forward current conduction mechanism can be identified, recombination-tunneling mechanism, trap charge limited space-charge-limited-current(SCLC) and SCLC mechanism for I < 10−7 A (region I), 10−7 < I < 10−4 A (region II) and I > 10−4 A (region III), respectively. While in region II, two different Et from exponential trap distribution model is determined to be 0.514 eV, 0.310 eV and the corresponding trap density is 1.63 × 1016 cm−3 and 1.71 × 1016 cm−3, respectively.