The investigation of temperature dependent electrical characteristics of Au/Ni/β-(InGa)2O3 Schottky diode

Shen, Yixian; Feng, Qian; Zhang, Ke; Hu, Zhuangzhuang; Yan, Guangshuo; Cai, Yuncong; Mu, Wenxiang; Jia, Zhitai; Zhang, Chunfu; Zhou, Hong; Zhang, Jincheng; Lian, Xiaozheng; Li, Zhanping

doi:10.1016/j.spmi.2019.106179

Cited by 13 publications

(4 citation statements)

References 52 publications

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“…2. In comparison to the literature, the shunt resistance is very high and, the series resistance is compatible with some results, as ~7.0 kΩ reported by Shen, Y. et al [12]. However, some references present really small series resistance, as 28.96 Ω reported by Reddy, P. et al [13].…”

Section: Resultssupporting

confidence: 89%

Electrical characterisation of β-Ga₂O₃ Schottky diode for deep UV sensor applications

et al. 2020

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β-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a β-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto -Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10 7 and high forward current of 17.58 mA/cm 2 at -5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung's and Norde's methods allowing for accurate calculation of the Schottky barrier height in this device.

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Section: Resultssupporting

confidence: 89%

Electrical characterisation of β-Ga₂O₃ Schottky diode for deep UV sensor applications

et al. 2020

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“…3(b). According to the theory of thermal electron emission (TE) mode [30,31] , the J−V characteristic of the Schottky diode can be described by the following equations.…”

Section: Resultsmentioning

confidence: 99%

Improvement of Ga₂O₃ vertical Schottky barrier diode by constructing NiO/Ga₂O₃ heterojunction

Ji,

Wang,

et al. 2024

J. Semicond.

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The high critical electric field strength of Ga2O3 enables higher operating voltages and reduced switching losses in power electronic devices. Suitable Schottky metals and epitaxial films are essential for further enhancing device performance. In this work, the fabrication of vertical Ga2O3 barrier diodes with three different barrier metals was carried out on an n–-Ga2O3 homogeneous epitaxial film deposited on an n+-β-Ga2O3 substrate by metal−organic chemical vapor deposition, excluding the use of edge terminals. The ideal factor, barrier height, specific on-resistance, and breakdown voltage characteristics of all devices were investigated at room temperature. In addition, the vertical Ga2O3 barrier diodes achieve a higher breakdown voltage and exhibit a reverse leakage as low as 4.82 ×10−8 A/cm2 by constructing a NiO/Ga2O3 heterojunction. Therefore, Ga2O3 power detailed investigations into Schottky barrier metal and NiO/Ga2O3 heterojunction of Ga2O3 homogeneous epitaxial films are of great research potential in high-efficiency, high-power, and high-reliability applications.

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“…49,50 At present, In-doping is available experimentally, which guarantees doping feasibility in practical implementation. 32,33,51,52…”

Section: Resultsmentioning

confidence: 99%

“…49,50 At present, In-doping is available experimentally, which guarantees doping feasibility in practical implementation. 32,33,51,52 sition in In-O bonds after doping. All In-O bonds are lengthened compared with the pristine Ga-O bonds due to larger In ionic radius, as listed in Table 1.…”

Section: Exfoliation Processmentioning

confidence: 99%

Indium doping-assisted monolayer Ga₂O₃ exfoliation for performance-enhanced MOSFETs

Dong

Li³

et al. 2023

Nanoscale

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The investigation of temperature dependent electrical characteristics of Au/Ni/β-(InGa)2O3 Schottky diode

Cited by 13 publications

References 52 publications

Electrical characterisation of β-Ga₂O₃ Schottky diode for deep UV sensor applications

Electrical characterisation of β-Ga₂O₃ Schottky diode for deep UV sensor applications

Improvement of Ga₂O₃ vertical Schottky barrier diode by constructing NiO/Ga₂O₃ heterojunction

Indium doping-assisted monolayer Ga₂O₃ exfoliation for performance-enhanced MOSFETs

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The investigation of temperature dependent electrical characteristics of Au/Ni/β-(InGa)2O3 Schottky diode

Cited by 13 publications

References 52 publications

Electrical characterisation of β-Ga2O3 Schottky diode for deep UV sensor applications

Electrical characterisation of β-Ga2O3 Schottky diode for deep UV sensor applications

Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunction

Indium doping-assisted monolayer Ga2O3 exfoliation for performance-enhanced MOSFETs

Contact Info

Product

Resources

About

Electrical characterisation of β-Ga₂O₃ Schottky diode for deep UV sensor applications

Electrical characterisation of β-Ga₂O₃ Schottky diode for deep UV sensor applications

Improvement of Ga₂O₃ vertical Schottky barrier diode by constructing NiO/Ga₂O₃ heterojunction

Indium doping-assisted monolayer Ga₂O₃ exfoliation for performance-enhanced MOSFETs