In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various β-Ga2O3 periodic fin widths of 1.5/3/5 μm are demonstrated with the incorporation of p-type NiOx. The β-Ga2O3 HJBS diode achieves a low specific on-resistance (Ron,sp) of 1.94 mΩ cm2 with a breakdown voltage of 1.34 kV at a β-Ga2O3 periodic fin width of 3 μm, translating to a direct-current Baliga's power figure of merit (PFOM) of 0.93 GW/cm2. In addition, we find that by shrinking the β-Ga2O3 width, the reverse leakage current is minimized due to the enhanced sidewall depletion effect from p-type NiOx. β-Ga2O3 HJBS diodes with p-type NiOx turn out to be an effective route for Ga2O3 power device technology by considering the high PFOM while maintaining a suppressed reverse leakage current.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.