We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel–Poole trap-assisted emission model. Moreover, a breakdown voltage of 300 V was obtained in Fluorinert ambient with an average electric field of 3 MV/cm in Mo/β-Ga2O3 Schottky barrier diode. The effects of the surface states, on the electric field distribution, were also analyzed by TCAD simulation. With the negative surface charge densities increasing, the peak electric field reduces monotonously. Furthermore, the Schottky barrier height inhomogeneity under forward bias was also discussed.

In this paper, the hybrid β-Ga 2 O 3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga 2 O 3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R 254 nm /R 400 nm up to 1.26 × 10 3 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga 2 O 3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.

No abstract