The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.

Room temperature magnetic skyrmions in magnetic multilayers are considered as information carriers for future spintronic applications. Currently, a detailed understanding of the skyrmion stabilization mechanisms is still lacking in these systems. To gain more insight, it is first and foremost essential to determine the full real‐space spin configuration. Here, two advanced X‐ray techniques are applied, based on magnetic circular dichroism, to investigate the spin textures of skyrmions in [Ta/CoFeB/MgO]n multilayers. First, by using ptychography, a high‐resolution diffraction imaging technique, the 2D out‐of‐plane spin profile of skyrmions with a spatial resolution of 10 nm is determined. Second, by performing circular dichroism in resonant elastic X‐ray scattering, it is demonstrated that the chirality of the magnetic structure undergoes a depth‐dependent evolution. This suggests that the skyrmion structure is a complex 3D structure rather than an identical planar texture throughout the layer stack. The analyses of the spin textures confirm the theoretical predictions that the dipole–dipole interactions together with the external magnetic field play an important role in stabilizing sub‐100 nm diameter skyrmions and the hybrid structure of the skyrmion domain wall. This combined X‐ray‐based approach opens the door for in‐depth studies of magnetic skyrmion systems, which allows for precise engineering of optimized skyrmion heterostructures.

Spin-orbit torque (SOT) provides an ultrafast and energy-efficient means to switch magnetization, which is of fundamental and technical importance for spintronic devices. [1][2][3][4][5] A typical SOT device consists of heavy metal/ferromagnet (HM/FM) bilayer, where the HM (e.g., Pt, W, Ta, etc.) converts charge current into spin current mainly due to the spin Hall effect (SHE) and then exerts a torque on the adjacent FM enabling magnetization manipulation. To improve the energy efficiency of SOT-driven magnetization switching, considerable efforts have been made to enhance the charge-spin conversion efficiency of HM [6][7][8][9] and reduce the shunting current in the FM. [10,11] Engineering the bilayer structure [9,12] or replacing HM by novel materials with larger charge-spin conversion efficiency and higher conductivity [10,13,14] are possible avenues to realize higher SOT efficiency. Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities.Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe 2 , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe 2 thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe 2 layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe 2 -like TMDs for wafer-scale spintronic device applications.

No abstract

VS4 anode materials with controllable morphologies from hierarchical microflower, octopus-like structure, seagrass-like structure to urchin-like structure have been successfully synthesized by a facile solvothermal synthesis approach using different alcohols as solvents. Their structures and electrochemical properties with various morphologies are systematically investigated, and the structure–property relationship is established. Experimental results reveal that Li+ ion storage behavior in VS4 significantly depends on physical features such as the morphology, crystallite size, and specific surface area. According to this study, electrochemical performance degrades on the order of urchin-like VS4 > octopus-like VS4 > seagrass-like VS4 > flower-like VS4. Among them, urchin-like VS4 demonstrates the best electrochemical performance benefiting from its peculiar structure which possesses large surface area that accommodates the volume change to a certain extent, and single-crystal thorns that provide fast electron transportation. Kinetic parameters derived from EIS spectra and sweep-rate-dependent CV curves, such as charge-transfer resistances, Li+ ion apparent diffusion coefficients and stored charge ratio of capacitive and intercalation contributions, both support this claim well. In addition, the EIS measurement was conducted during the first discharge/charge process to study the solid electrolyte interface (SEI) formation on urchin-like VS4 and kinetics behavior of Li+ ion diffusion. A better fundamental understanding on Li+ storage behavior in VS4 is promoted, which is applicable to other vanadium-based materials as well. This study also provides invaluable guidance for morphology-controlled synthesis tailored for optimal electrochemical performance.

No abstract

The beautiful interplay between light and matter can give rise to many striking physical phenomena, surface plasmon resonance (SPR) being one of them. Plasmonic immunosensors monitor refractive index changes that occur as a result of specific ligand–analyte or antibody–antigen interactions taking place on the sensor surface. The coronavirus disease (COVID‐19) pandemic has jeopardized the entire world and has resulted in economic slowdown of most countries. In this work, a model of a sandwich plasmonic biosensor that utilizes gold nanorods (Au NRs) for the detection of COVID‐19 SARS‐CoV‐2 spike protein is presented. Simulation results for different prismatic configurations for the basic Kretschmann layout are presented. It is found that a BK7 glass prism‐based SPR sensor has an incremental sensitivity of 111.11 deg RIU−1. Additionally, using Comsol Multiphysics the electric field enhancement observed for various aspect ratios and layouts of Au NRs are discussed in depth.

Different symmetry breaking ways determine various magnetization switching modes driven by spin–orbit torques (SOT). For instance, an applied or effective field parallel to applied current is indispensable to switch magnetization with perpendicular anisotropy by SOT. Besides of this mode, here we experimentally demonstrate a distinct field-free switching mode in a T-type magnetic system with structure of MgO/CoFeB/Ta/CoFeB/MgO where a perpendicular layer with tilted easy axis was coupled to an in-plane layer with a uniaxial easy axis. Current was applied orthogonal to both easy axes and thus also normal to an in-plane effective field experienced by the perpendicular layer. Dynamic calculation shows perpendicular layer could be switched at the same time as the in-plane layer is switched. These field-free switching modes realized in the same T-type magnetic system might expedite the birth of multi-state spin memories or spin logic devices which could be operated by all electric manners.