Controlled growth and characteristics of single-phase Cu2O and CuO films by pulsed laser deposition

Chen, Aiping; Long, Hua; Li, Xiangcheng; Li, Yuhua; Yuan, Guang; Lu, Peixiang

doi:10.1016/j.vacuum.2008.10.003

Cited by 249 publications

(118 citation statements)

References 20 publications

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“…The peak position of the Cu 2p 3/2 level is identical to the reported values, which were observed for Cu 2 O thin ilms prepared by other methods [31,33]. In addition, no peak for the CuO phase was observed at its typical value of 944 eV [31].…”

Section: Modern Technologies For Creating the Thin-film Systems And Csupporting

confidence: 86%

“…In addition, most of the aforementioned physical processing techniques are not economically viable in large area applications. Solution-based processes have, therefore, emerged as atractive alternatives because of the ability for cost-efective production [31]. Armelao and coworkers have successfully employed a sol-gel solution containing dissolved copper acetate to produce a Cu 2 O thin ilm [32].…”

Section: Molecular Precursor Methodsmentioning

confidence: 99%

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Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

Nagai¹,

Sato²

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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Functional thin ilms are used in various ields of our life. Many diferent methods are used to fabricate these ilms including physical vapor deposition (PVD) and chemical processes. The chemical processes can be used to manufacture thin ilms in a relatively cheap way, as compared to PVD methods. This chapter summarizes the procedures of the molecular precursor method (MPM), a chemical process, for fabrication of both metal oxide semiconductor Cu 2 O and metallic Cu thin ilms by utilizing Cu(II) complexes in coating solutions. The MPM, recently developed and reported by the present authors, represents a facile procedure for thin ilm fabrication of various metal oxides or phosphates. This method pertinent to the coordination chemistry and materials science including nanoscience and nanotechnology has provided various thin ilms of high quality. The MPM is based on the design of metal complexes in coating solutions with excellent stability, homogeneity, miscibility, coatability, etc., which are practical advantages. The metal oxides and phosphates are useful as the electron and/or ion conductors, semiconductors, dielectric materials, etc. This chapter will describe the principle and recent achievement, mainly on fabricating the p-type Cu 2 O and metallic Cu thin ilms of the MPM.

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Section: Modern Technologies For Creating the Thin-film Systems And Csupporting

confidence: 86%

Section: Molecular Precursor Methodsmentioning

confidence: 99%

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

Nagai¹,

Sato²

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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“…The band gap values obtained are in the range 2.43 eV to 2.5 eV (Table I) and are in close agreement with the values reported in the literature. 32,33 The size dependent band gap is a quantum confinement effect and the observation of this effect for grains of nanostructutred films of Cu 2 O of size much larger than the Bohr exciton diameter of the material indicates the existence of a potential barrier inside the grains restraining the movement of the charge carriers as Noack and Eychmuller 34 explained the blue shift of band gap in the case of ZnO thin films consisting of nanoparticles of size larger than Bohr exciton diameter. Figure 6 shows the photoluminescence (PL) spectra of nanostructured Cu 2 O films obtained by oxidizing the nanostructured Cu films deposited by evaporating different masses of Cu at a pressure of 1 × 10 −4 mbar and recorded with an excitation wavelength of 310 nm.…”

Section: Resultsmentioning

confidence: 99%

Grain size tuning of nanostructured Cu2O films through vapour phase supersaturation control and their characterization for practical applications

Anu

Khadar

2015

AIP Advances

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A strategy for creating nanostructured films is the alignment of nanoparticles into ordered superstructures as living organisms synthesize biomaterials with superior physical properties using nanoparticle building blocks. We synthesized nanostructured films of Cu2O of variable grain size by establishing the condition of supersaturation for creation of nanoparticles of copper which deposited as nanograined films and which was then oxidized. This technique has the advantage of being compatible with conventional vacuum processes for electronic device fabrication. The Cu2O film samples consisted of a secondary structure of spherical particles of almost uniform size, each particle being an agglomerate of primary nanocrystals. Fractal analysis of the AFM images of the samples is carried out for studying the aggregation mechanism. Grain size tuning of the nanostructured Cu2O films has been studied using XRD, and micro-Raman and photoluminescence spectroscopy.

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“…A wide range of deposition techniques such as chemical vapor deposition, 13 electrodeposition, 14 thermal evaporation, 15 sol-gel techniques, 16 spray pyrolysis, 17 pulsed laser deposition, 18 and plasma based ion implantation and deposition 19 have been used to prepare metal oxide films including Cu oxide films. The physical and chemical properties of the films are affected by the deposition method and its conditions.…”

mentioning

confidence: 99%

Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films

Park¹,

Kwon²,

Koh³

2011

Bulletin of the Korean Chemical Society

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We report the results of the characterization of Cu oxide thin films deposited by radio frequency (r.f.) magnetron sputtering at different annealing temperatures. The deposited Cu oxide thin films were investigated by scanning electron microscopy, spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy, Xray photoelectron spectroscopy, and contact angle measurements. The thickness of the films was about 180 nm and the monoclinic CuO phase was detected. The CuO 2 and Cu(OH) 2 phases were grown as amorphous phase and the ratio of the three phases were independent on the annealing temperature. The surface of Cu oxide films changed from hydrophilic to hydrophobic as the annealing temperature increased. This phenomenon is due to the increase of the surface roughness. The direct optical band gap was also obtained and laid in the range between 2.36 and 3.06 eV.

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Controlled growth and characteristics of single-phase Cu2O and CuO films by pulsed laser deposition

Cited by 249 publications

References 20 publications

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

Grain size tuning of nanostructured Cu2O films through vapour phase supersaturation control and their characterization for practical applications

Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films

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