A new t h i n -P t S i d e t e c t o r s t r u c t u r e w a s d e v e l o p e d t h a t r e s u l t e d i n more than an o r d e r of magnitude improvement i n r e s p o n s i v i t y o v e r t h e p r e v i o u s P t S i d e t e c t o r s i n t h e 3 t o 5 pm s p e c t r a l r a n g e . The new s t r u c t u r e c o n s i s t s o f a t h i n f i l m o f P t S i formed on p-type 30 t o 50 ohm-cm S i s u b s t r a t e . The t h i n P t S i d e t e c t o r a l s o i n c l u d e s a n aluminum r e f l e c t o r s e p a r a t e d f r o m t h e P t S i f i l m by a 2000 t o 5000 A t h i c k l a y e r o f d e p o s i t e d SiOp. We have developed a p r o c e s s f o r f a b r i c a t i o n o f t h e t h i n f i l m s o f P t S i w i t h v e r y good u n i f o r m i t y a n d t h i c k n e s s c o n t r o l . The d e v i c e s s t u d i e d i n c l u d e t h i c k n e s s e s o f P t S i i n t h e r a n g e f r o m 20 t o 100A. The f i r s t IR-CCD a r r a y made a t RCA Laboratories with the above high-performance P t S i d e t e c t o r s h a d 25 x 5 0 -e l e m e n t~~~~~~. Recently we have developed a 32 x 64 and a 64 x 128 IR-CCD a r r a y . T h i s p a p e r w i l l i n c l u d e a d e s c r i p t i o n o f t h e h i g hp e r f o r m a n c e t h i n -P t S i d e t e c t o r s t r u c t u r e a n d c h a r a c t e r i s t i c s as well as t h e main d e s i g n f e a t u r e s a n d t h e p e r f o r m a n c e o f t h e 64 x 128 I R imager. The 64 x 128
The design for two high fill-factor CCD arrays for optical signal processing applications is described. The imaging registers have 1 024 x 1 024 and 51 2 x 51 2 pixels and achieve virtually 100% optical fill factor through the use of substrate thinning and back illumination. High frame-rate readout is obtained by the use of a dual storage register and multiple floating-diffusion output ports resulting in reduced readout frequency. On-chip correlated double sampling amplifiers are implemented to reduce the readout noise and simplify off-chip analog signal processing. Both chips include anti-blooming drain structures and ESD protection circuits.
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