&lt;title&gt;Design And Performance Of 64 X 128 Element PtSi Schottky-Barrier Infrared Charge-Coupled Device (IRCCD) Focal Plane Array&lt;/title&gt;

Kosonocky, Walter F.; Elabd, H.; Erhardt, H. G.; Shallcross, F. V.; Meray, Grazyna M.; Villani, Thomas S.; Groppe, Joseph V.; Miller, Robert L.; Frantz, V.L.; Cantella, M. J.; Klein, J.; Roberts, Natalia

doi:10.1117/12.933754

Cited by 10 publications

(9 citation statements)

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“…Pd 2 Si/Si Schottky PDs were developed for satellite applications showing the ability to detect a spectrum ranging from 1 to 2.5 µm when cooled to a temperature of 120 K [4,5]. On the other hand, PtSi/Si Schottky PDs were developed for operation at longer wavelengths ranging from 3 to 5 µm [6,7], although they require a lower temperature of 80 K. A focal plane array (FPA) constituted by an array of 512 × 512 PtSi/Si pixels was realized, demonstrating the first spectacular convergence between Si photonics and electronics [8]. Unfortunately, these devices can only work at cryogenic temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Unfortunately, these devices can only work at cryogenic temperature. Indeed, the low Schottky barrier height (SBH) required to achieve an acceptable efficiency (0.21 eV for PtSi [7] and 0.34 eV for Pd 2 Si/Si [4]) is comes at the cost of PD noise (dark current), which must be reduced by lowering the working temperature. PD noise affects the noise equivalent power (NEP), that is, the minimum detectable optical power, which has a huge impact on both the device sensitivity and the bit error rate (BER) of a communication link.…”

Section: Introductionmentioning

confidence: 99%

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Theoretical Investigation of Responsivity/NEP Trade-off in NIR Graphene/Semiconductor Schottky Photodetectors Operating at Room Temperature

2021

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In this work we theoretically investigate the responsivity/noise equivalent power (NEP) trade-off in graphene/semiconductor Schottky photodetectors (PDs) operating in the near-infrared regime and working at room temperature. Our analysis shows that the responsivity/NEP ratio is strongly dependent on the Schottky barrier height (SBH) of the junction, and we derive a closed analytical formula for maximizing it. In addition, we theoretically discuss how the SBH is related to the reverse voltage applied to the junction in order to show how these devices could be optimized in practice for different semiconductors. We found that graphene/n-silicon (Si) Schottky PDs could be optimized at 1550 nm, showing a responsivity and NEP of 133 mA/W and 500 fW/Hz, respectively, with a low reverse bias of only 0.66 V. Moreover, we show that graphene/n-germanium (Ge) Schottky PDs optimized in terms of responsivity/NEP ratio could be employed at 2000 nm with a responsivity and NEP of 233 mA/W and 31 pW/Hz, respectively. We believe that our insights are of great importance in the field of silicon photonics for the realization of Si-based PDs to be employed in power monitoring, lab-on-chip and environment monitoring applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of Responsivity/NEP Trade-off in NIR Graphene/Semiconductor Schottky Photodetectors Operating at Room Temperature

2021

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“…Both palladium silicide (Pd 2 Si) and platinum silicide (PtSi) have been widely employed in infrared charge-coupled device (CCD) image sensors but, unfortunately, they have to work at cryogenic temperature for increasing the signal-to-noise ratio at an acceptable level. Pd 2 Si/Si Schottky PDs can operate in the spectrum ranging from 1 to 2.4 μm requiring temperatures of 120 K [ 11 , 12 ] (e.g., satellite applications) while PtSi/Si Shottky PDs can work to an extended spectrum ranging from 3 to 5 μm [ 13 , 14 ] but they needs to operate at lower temperatures of only 80 K. Focal plane arrays (FPA) based on 512 × 512 PtSi/Si PDs have been demonstrated [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

Casalino

2020

Micromachines

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In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.

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“…The first generation of detectors were based on a Pd2Si/Si Schottky junctions and were developed for operating in the spectrum from 1 to 2.4 µm for satellite applications and it required an operating temperature of 120 K [7,8]. Subsequently, PtSi/Si Shottky junctions showed the capability to work at longer wavelengths, from 3 to 5 µm [9,10]. The 512 × 512 focal plane array based on PtSi requires an operating temperature of 80 K [11].…”

Section: Introductionmentioning

confidence: 99%

Silicon Meets Graphene for a New Family of Near-Infrared Schottky Photodetectors

Casalino

2019

Applied Sciences

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In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

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<title>Design And Performance Of 64 X 128 Element PtSi Schottky-Barrier Infrared Charge-Coupled Device (IRCCD) Focal Plane Array</title>

Cited by 10 publications

References 0 publications

Theoretical Investigation of Responsivity/NEP Trade-off in NIR Graphene/Semiconductor Schottky Photodetectors Operating at Room Temperature

Theoretical Investigation of Responsivity/NEP Trade-off in NIR Graphene/Semiconductor Schottky Photodetectors Operating at Room Temperature

Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

Silicon Meets Graphene for a New Family of Near-Infrared Schottky Photodetectors

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