"Construction And Performance Of A 320 X 244-Element IR-CCD Imager With PtSi Schottky-Barrier Detectors

Villani, Thomas S.; Kosonocky, Walter F.; Shallcross, F. V.; Groppe, Joseph V.; Meray, Grazyna M.; O’Neill, J. J.; Esposito, Benjamin J.

doi:10.1117/12.960646

Cited by 19 publications

(5 citation statements)

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“…A notch implant [5] has been demonstrated on previous DALSA investigations [3] to increase the charge storage capacity. In that case CHORD [6] was used to model the increase in charge storage capacity; as well the charge storage capacity was measured on the actual device.…”

Section: Device Architecture and Designmentioning

confidence: 92%

<title>Design and electro-optical characterization of a 1024 x 1024 imager</title>

et al. 1993

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Large format charge coupled device area arrays (1 million pixels or more) have proven to be useful in scientific, medical and industrial imaging applications. DALSA has developed a 1024 x 1024 pixel single output, full-frame area array incorporating 3-poly 3-phase buried channel NMOS CCD shift registers and a 10 m x 10 m pixel pitch. The device was fabricated with an additional buried channel implant (notch) in the pixel columns to increase charge storage capacity. In this paper the authors discuss the design and initial performance evaluation of the device. Preliminary measurements of the pixel charge storage capacity indicate 70,000 e-without notch and 140,000 e-with notch.The results indicate that the sensor should be suitable for a variety of applications such as high resolution machine vision, still photography, and scientific imaging. . IntroductionCharge coupled device (CCD) [1] area arrays with 1 million pixels or greater [2] have found uses in a broad range of imaging applications. DALSA is pursuing the development of large format arrays and has fabricated single and multi-output 2048 x 2048 pixel [3] and multi-output 5120 x 5120 pixel imagers [4]. As part of this R&D effort DALSA has designed and fabricated a front illuminated, single output 1024 x 1024 pixel area array. The goal was to develop a general-purpose sensor which could be used in industrial, scientific and medical applications, including applications requiring high frame rates. Device Architecture and Design(i) Overall Architecture Figure 1 is a block diagram of the device. The imaging region consists of 1024 x 1024 active pixels. There are 4 columns to the left and right of the image area. Three columns are covered with second metal to provide a dark reference; the 4th column is half covered isolating the dark columns from the imaging region. Above and below the imaging region each are two rows of isolation pixels; one row completely covered with second metal and one row half covered. The remaining non-imaging areas of the device are covered with second metal as a light shield. The pixels are photogate type having a 10 m x 10 m pitch with 3 m field oxide channel stops. 0-8194-1 133-7/93/$6.00 SPIE Vol. 1900 / 147 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/28/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Section: Device Architecture and Designmentioning

confidence: 92%

<title>Design and electro-optical characterization of a 1024 x 1024 imager</title>

et al. 1993

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“…12 For the purpose of radiometric imaging, the camera is operated in a noninterlaced mode with 320ϫ122 pixels and automatically se-lectable optical integration times in the range from 120 s to 12 s or longer. 12 For the purpose of radiometric imaging, the camera is operated in a noninterlaced mode with 320ϫ122 pixels and automatically se-lectable optical integration times in the range from 120 s to 12 s or longer.…”

Section: Ir Cameramentioning

confidence: 99%

Recent advances in the development of a multiwavelength imaging pyrometer

Kaplinsky

McCaffrey

et al. 1997

Opt. Eng

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A multiwavelength imaging pyrometer (MWIP) is described that permits real-time remote sensing of temperature profiles of targets with unknown emissivity by measuring the spectral radiance of a target at several distinct wavelengths using a 320ϫ122-element PtSi ir CCD imager with an assembly of seven narrowband ir filters in the range from 1790 to 4536 nm. Based on these measurements, the temperature and model parameters of the target emissivity are determined simultaneously from the least-squares fit of the theoretical model of the ir camera output signal to the experimental data. The real-time least-squares minimization is accomplished by combination of Levenberg-Marquardt and simulatedannealing algorithms. The experimental MWIP system also includes a least-squares-based calibration algorithm for evaluation of effective values of peak filter transmissions and center wavelengths based on the detection of radiation emitted by the precalibrated blackbody source over a wide range of temperatures. To achieve high radiometric accuracy, the ir CCD camera was operated with black-level and background subtraction and with compensation for dark-current charge as a function of the detected signal level. To minimize the effect of the response nonlinearity on the accuracy of real-time MWIP temperature estimation, we have developed an algorithm that provides for imager operation at fixed preselected signal level for each spectral channel by adaptively changing the duration of the optical integration time of the imager. Initial testing demonstrated an accuracy of Ϯ1.0°C for real-time temperature measurements of the center of the blackbody aperture in the range from 500 to 1000°C. Temperature resolution of Ϯ3°C was demonstrated for the blackbody source viewed through a double-side polished silicon wafer with unknown spectral transmissivity in the temperature range from 500 to 900°C.

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“…on silicon with such detectors, have been considered in many works (e.g., [3,4]). The sensitivity of IR SB detectors to radiation results from excitation of electrons (or holes) with absorption of radiation quantums in a quasimetallic SB layer when the energy of quantums exceeds the potential barrier [1].…”

Section: State Of the Art Quantum Infrared Schottky Barrier (Ir Sb) mentioning

confidence: 99%

New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

Иванов¹,

Ivanov²

2011

Advances in OptoElectronics

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The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED) take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB) as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection-"quantum" and hot electrons gas emission-has allowed the creation of a superwideband IR detector using standard silicon technology.

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"Construction And Performance Of A 320 X 244-Element IR-CCD Imager With PtSi Schottky-Barrier Detectors

Cited by 19 publications

References 0 publications

<title>Design and electro-optical characterization of a 1024 x 1024 imager</title>

<title>Design and electro-optical characterization of a 1024 x 1024 imager</title>

Recent advances in the development of a multiwavelength imaging pyrometer

New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

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