<title>Design and electro-optical characterization of a 1024 x 1024 imager</title>

Abstract

Large format charge coupled device area arrays (1 million pixels or more) have proven to be useful in scientific, medical and industrial imaging applications. DALSA has developed a 1024 x 1024 pixel single output, full-frame area array incorporating 3-poly 3-phase buried channel NMOS CCD shift registers and a 10 m x 10 m pixel pitch. The device was fabricated with an additional buried channel implant (notch) in the pixel columns to increase charge storage capacity. In this paper the authors discuss the design and initial performance evaluation of the device. Preliminary measurements of the pixel charge storage capacity indicate 70,000 e-without notch and 140,000 e-with notch.The results indicate that the sensor should be suitable for a variety of applications such as high resolution machine vision, still photography, and scientific imaging. . IntroductionCharge coupled device (CCD) [1] area arrays with 1 million pixels or greater [2] have found uses in a broad range of imaging applications. DALSA is pursuing the development of large format arrays and has fabricated single and multi-output 2048 x 2048 pixel [3] and multi-output 5120 x 5120 pixel imagers [4]. As part of this R&D effort DALSA has designed and fabricated a front illuminated, single output 1024 x 1024 pixel area array. The goal was to develop a general-purpose sensor which could be used in industrial, scientific and medical applications, including applications requiring high frame rates. Device Architecture and Design(i) Overall Architecture Figure 1 is a block diagram of the device. The imaging region consists of 1024 x 1024 active pixels. There are 4 columns to the left and right of the image area. Three columns are covered with second metal to provide a dark reference; the 4th column is half covered isolating the dark columns from the imaging region. Above and below the imaging region each are two rows of isolation pixels; one row completely covered with second metal and one row half covered. The remaining non-imaging areas of the device are covered with second metal as a light shield. The pixels are photogate type having a 10 m x 10 m pitch with 3 m field oxide channel stops. 0-8194-1 133-7/93/$6.00 SPIE Vol. 1900 / 147 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/28/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

Analysis of the Transient Response of a Dual-Fed RC Transmission Line

“…For example, in order to mitigate a slow rise time, a circular clock bus can be fed from both ends, and it becomes of interest to have an analytical expression for the transient response at the center of the bus. Similarly, in order to reduce RC degradation of clock signals along long CCD electrodes, it is possible to feed the clock to both ends of the electrodes [ 7 ]. An analytical expression that predicts the worst-case rise time at the center of the electrode is therefore a useful design equation.…”