<title>Advances In Platinum Silicide Schottky-Barrier IR-CCD Image Sensors</title>

Silicon Photodetectors Based on Internal Photoemission Effect: The Challenge of Detecting Near-Infrared Light

“…These FPAs exhibited relatively small photoresponse. More than an order of magnitude improvement in photoresponse was demonstrated in 1980 with 50×50-element FPAs constructed with thin PtSi SBDs at the David Sarnoff Research Center Kosonocky et al, 1980). The SBDs in this FPA had an optical cavity in the form of a thin (20 -40 Å) PtSi layer separated from an aluminium reflector by a layer of deposited SiO 2 .…”

“…(Shepherd, 1984;Shepherd, 1988;Kosonocky, 1991;Kosonocky, 1992;Shepherd, 1998). In the early years, the development of SBD FPA technology progressed from the demonstration of the initial concepts in the 1970's (Kohn et al, 1975;Capone et al, 1978;Kosonocky et al, 1978;Shepherd et al, 1979) to the development of high resolution scanning and staring devices in the 1980's and in the 1990's, that were at the basis of many applications for infrared imaging in the NIR, MIR and FIR bands. The first Schottky-barrier FPAs were made with thick Pd 2 Si or PtSi detectors using about 600 Å of deposited palladium or platinum.…”

<title>Schottky-barrier image sensor with 100% fill factor</title>

“…The unique feature of the DSI construction is that it produces very high density monolithic focal plane arrays (FPAs) with 100% fill factor by virtue of a 3-D construction using a thinned silicon substrate with a continuous Schottky-barrier suicide layer on one side and a p-type buried-channel CCD readout on the other side [11. In 1973, Shepherd and Yang, from RADC, Hanscom AFB, proposed silicide Schottky-barrier detector (SBD) arrays for infrared thermal imaging [21. Infrared image sensors with 25 x 50 and 256 x 1 SBDs with thick PtSi film (-1000 A) were demonstrated in 1978 [3, 41. The major breakthrough in the improvement of the responsivity of PtSi SBDs by about two orders of magnitude came with the introduction of SBDs with optical cavity having a thin (20 to 50 A) PtSi film [5][6][7][8]. This initial breakthrough was made in 1979 by the David Sarnoff Research Center, Princeton, NJ (formerly RCA Laboratories) as a result of the support and cooperation of RADC, Hanscom AFB.…”

New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

“…on silicon with such detectors, have been considered in many works (e.g., [3,4]). The sensitivity of IR SB detectors to radiation results from excitation of electrons (or holes) with absorption of radiation quantums in a quasimetallic SB layer when the energy of quantums exceeds the potential barrier [1].…”