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This paper is a review of the design and fabrication of resonant sensors that are based on resonating silicon structures. Some of the design aspects that control the performance of the resonator sensor are analysed. The most important aspects are: resonator materials, fabrication technology, type of resonator, mode of vibration, quality of vibration and temperature stability. Q-factor-reducing damping factors are discussed and the different techniques that are available for excitation and detection of the vibration of the resonator are described. Descriptions of published resonant silicon sensors are presented.

The majority of microelectromechanical system (MEMS) devices must be combined with integrated circuits (ICs) for operation in larger electronic systems. While MEMS transducers sense or control physical, optical or chemical quantities, ICs typically provide functionalities related to the signals of these transducers, such as analog-to-digital conversion, amplification, filtering and information processing as well as communication between the MEMS transducer and the outside world. Thus, the vast majority of commercial MEMS products, such as accelerometers, gyroscopes and micro-mirror arrays, are integrated and packaged together with ICs. There are a variety of possible methods of integrating and packaging MEMS and IC components, and the technology of choice strongly depends on the device, the field of application and the commercial requirements. In this review paper, traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed. These include approaches based on the hybrid integration of multiple chips (multi-chip solutions) as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques. These are important technological building blocks for the 'More-ThanMoore' paradigm described in the International Technology Roadmap for Semiconductors. In this paper, the various approaches are categorized in a coherent manner, their merits are discussed, and suitable application areas and implementations are critically investigated. The implications of the different MEMS and IC integration approaches for packaging, testing and final system costs are reviewed.

This paper presents a lumped-mass model especially developed for valveless diffuser pumps. It is implemented using MATLAB. The model is tested for different previously reported valveless diffuser pumps and shows good agreement with the experimental results. The model predicts the flow-pressure characteristics for different excitation levels. The model makes it possible to study flows and pressures inside the pump. The simulations show that the maximum excitation level for the valveless diffuser pump is probably limited by low chamber pressure. Modified designs are tested and it is shown that a pump with two serially connected pump chambers working in anti-phase is advantageous compared with a single chamber pump for both the maximum volume flow and maximum pump pressure. The simulations also indicate that scaling down the diffuser elements from an 80 × 80 µm 2 throat cross-sectional area to a 40 × 40 µm 2 throat cross-sectional area probably increases the attainable pressure head.

Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to $$4520\;{\mathrm{cm}}^2{\mathrm{V}}^{ - 1}{\mathrm{s}}^{ - 1}$$ 4520 cm 2 V − 1 s − 1 . Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.