Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nanoelectromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nanoelectromechanical system (NEMS) transducers. This demonstration is consistent with our simulations and previously reported gauge factors and simulation values. The membrane in our experiment acts as a strain gauge independent of crystallographic orientation and allows for aggressive size scalability. When compared with conventional pressure sensors, the sensors have orders of magnitude higher sensitivity per unit area.

We demonstrate resistive humidity sensing using a single-layer graphene patch placed on top of a SiO2 layer on a Si wafer.

The majority of microelectromechanical system (MEMS) devices must be combined with integrated circuits (ICs) for operation in larger electronic systems. While MEMS transducers sense or control physical, optical or chemical quantities, ICs typically provide functionalities related to the signals of these transducers, such as analog-to-digital conversion, amplification, filtering and information processing as well as communication between the MEMS transducer and the outside world. Thus, the vast majority of commercial MEMS products, such as accelerometers, gyroscopes and micro-mirror arrays, are integrated and packaged together with ICs. There are a variety of possible methods of integrating and packaging MEMS and IC components, and the technology of choice strongly depends on the device, the field of application and the commercial requirements. In this review paper, traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed. These include approaches based on the hybrid integration of multiple chips (multi-chip solutions) as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques. These are important technological building blocks for the 'More-ThanMoore' paradigm described in the International Technology Roadmap for Semiconductors. In this paper, the various approaches are categorized in a coherent manner, their merits are discussed, and suitable application areas and implementations are critically investigated. The implications of the different MEMS and IC integration approaches for packaging, testing and final system costs are reviewed.

Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentally verified in graphene using uniaxial strain in graphene. Here, we report experimental and theoretical data on the uni- and biaxial piezoresistive properties of suspended graphene membranes applied to piezoresistive pressure sensors. A detailed model that utilizes a linearized Boltzman transport equation describes accurately the charge-carrier density and mobility in strained graphene and, hence, the gauge factor. The gauge factor is found to be practically independent of the doping concentration and crystallographic orientation of the graphene films. These investigations provide deeper insight into the piezoresistive behavior of graphene membranes.

Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next generation mobile, wearable, and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring-mass and piezoresistive transducers. The transducers, which are realized using processes that are compatible with large-scale semiconductor manufacturing technologies, can yield NEMS accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers. With our devices, we also extract the Young's modulus values of double-layer graphene and show that the graphene ribbons have significant built-in stresses.

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A microscale three‐point bend experiment on wood has been carried out. The full 3D strain field of the microscale wood structure has been determined by use of digital volume correlation, based on reconstructed 3D image data acquired with synchrotron radiation micro‐computed tomography. The wood specimen, which measures 1.57 × 3.42 × 0.75 mm3, was scanned in different load states along the three‐point bend load cycle, from unloaded state to failure. The correlation algorithm is based on a Chebyshev polynomial description of the displacements, which allows a continuous representation of the 3D deformation fields. The methodology of the correlation algorithm is described thoroughly and its performance is tested for a 3D structure that is exposed to a virtual pre‐defined deformation. The performance is tested both for noise free volume data as well as for structures with additive noise content. The performance test shows that the correlation algorithm resolves the applied deformation satisfyingly well. In the real experiment, on wood microstructure, the displacement fields show a structural behaviour that is consistent with what is expected for a specimen exposed to three‐point bend. However, there are also anomalous effects present in the displacement fields that can be coupled to characteristic features in the cellular structure of the wood. Furthermore, 3D strain calculations based on the obtained displacement data shows a concentration of tensile strain in the region where the specimen eventually collapses. The experimental results show that the use of X‐ray‐based tomography with high spatial resolution in combination with digital volume correlation can successfully be used to perform 3D strain measurements on wood, at the microscale.

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