Resonant silicon sensors

Stemme, Göran

doi:10.1088/0960-1317/1/2/004

Cited by 256 publications

(126 citation statements)

References 29 publications

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“…The increasing Q factor has previously been observed 14,15 and is likely due to the smaller centre of mass movement and smaller radiation at the support for increasing bending modes. 16 In conclusion, a mass responsivity of approximately 5 fg/ Hz has been observed for a micrometer sized cantilever when operating the cantilever in the fourth mode. The increase in Q factor and resonant frequency as well as the decrease in effective mass makes the intrinsic sensitivity of the cantilever significantly better for increasing mode numbers ͑ϳ300 for the fourth mode͒.…”

Section: * ͑1͒mentioning

confidence: 76%

Enhanced functionality of cantilever based mass sensors using higher modes

Dohn

Sandberg

Svendsen

et al. 2005

Applied Physics Letters

255

171

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By positioning a single gold particle at different locations along the length axis on a cantilever based mass sensor, we have investigated the effect of mass position on the mass responsivity and compared the results to simulations. A significant improvement in quality factor and responsivity was achieved by operating the cantilever in the fourth bending mode thereby increasing the intrinsic sensitivity. It is shown that the use of higher bending modes grants a spatial resolution and thereby enhances the functionality of the cantilever based mass sensor.

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Section: * ͑1͒mentioning

confidence: 76%

Enhanced functionality of cantilever based mass sensors using higher modes

Dohn

Sandberg

Svendsen

et al. 2005

Applied Physics Letters

255

171

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“…Among these miniature force sensors, resonant sensing devices are attractive to researchers due to its quasi-digital output signal and high accuracies [8]. 10 The conventional approach employs a single degree-of-freedom (DoF) resonator; when an external force is exerted on the resonator, the stiffness changes while the mass remains the same, leading to a frequency shift [9].…”

Section: Introductionmentioning

confidence: 99%

A force sensor based on three weakly coupled resonators with ultrahigh sensitivity

Zhao

Wood

Xie

et al. 2015

Sensors and Actuators A: Physical

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A force sensor based on three weakly coupled resonators with ultrahigh sensitivity, Sensors & Actuators: A. Physical (2015), http://dx.doi.org/10.1016/j.sna. 2015.05.011 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractA proof-of-concept force sensor based on three degree-of-freedom (DoF) weakly coupled resonators was fabricated using a silicon-on-insulator (SOI) process and electrically tested in 20µTorr vacuum. Compared to the conventional single resonator force sensor with frequency shift as output, by measuring the amplitude ratio of two of the three resonators, the measured force sensitivity of the 3DoF sensor was 4.9 × 10 6 /N, which was improved by two orders magnitude. A bias stiffness perturbation was applied to avoid mode aliasing effect and improve the linearity of the sensor. The noise floor of the amplitude ratio output of the sensor was theoretically analyzed for the first time, using the transfer function model of the 3DoF weakly coupled resonator system. It was shown based on measurement results that the output noise was mainly due to the thermalelectrical noise of the interface electronics. The output noise spectral density was measured, and agreed well with theoretical estimations. The noise floor of the force sensor output was estimated to be approximately 1.39nN for an assumed 10Hz bandwidth of the output signal, resulting in a dynamic range of 74.8dB.

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“…The principle of operation as well as areas of applications for cantilever sensors are well described in review articles by, e.g., Stemme, 1 Lavrik, 2 and Ziegler; 3 and much work is being done in the field of fabrication and characterization of resonant cantilevers. [4][5][6][7][8] State-of-the-art nanocantilever mass sensors have been fabricated with reported estimated sensitivities in the attogram and subattogram regime.…”

Section: Introductionmentioning

confidence: 99%

Characterization system for resonant micro- and nanocantilevers

Sandberg

Boisen

Svendsen

2005

Review of Scientific Instruments

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We present a system for characterization of the resonant properties of micro- and nanocantilever sensors. The system has been constructed as a vacuum chamber with capabilities for controlling environmental conditions such as pressure, temperature, and chemical constituents. Characterization can be achieved either electrically or using a specialized laser-optical detection system. The system has been used to characterize the resonant properties of SiO2 cantilevers as well as other resonant structures. We present experimental results of a SiO2 resonant cantilever, showing an exceptional accuracy in resonant frequency determination, and demonstrating the importance of resonance characterization in a controlled environment.

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Resonant silicon sensors

Cited by 256 publications

References 29 publications

Enhanced functionality of cantilever based mass sensors using higher modes

Enhanced functionality of cantilever based mass sensors using higher modes

A force sensor based on three weakly coupled resonators with ultrahigh sensitivity

Characterization system for resonant micro- and nanocantilevers

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