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AgInS2-ZnS (ZAIS) nanocrystals are very good candidates for easily synthesized, highly efficient cadmium-free nano-phosphors. They can be employed for the development of next generation white-LED technologies, taking advantage of their nanometric size. This paper describes the combined use of time-resolved emission spectroscopy and photoluminescence quantum yield measurements to quantitatively compare the efficiency of each recombination pathway involved in the photoluminescence of ZAIS nanocrystals. This approach, applied to nanocrystals of different sizes, compositions and surface chemistry revealed the critical role of surface effects. Moreover, we developed a new type of surface passivation that increases the photoluminescence quantum yield of all nanocrystal compositions by 15 to 20%. This molecular surface passivation can be applied as a replacement or in addition to the already established ZnS shell passivation method.

n -channel organic thin film transistors were fabricated on polyethylene naphthalate substrates. The first part of the paper is devoted to a critical analysis of eight methods to extract the threshold voltage from the transfer characteristic in the linear regime. Next, to improve electron injection and reduce contact resistance, self-assembled monolayers (SAMs) were deposited on the gold source and drain electrodes. The subsequent modification on the current-voltage characteristics of the transistors is analyzed by the transfer line method, using a threshold-voltage-corrected gate voltage. The improved performance of the device obtained with some of the SAM treatments is attributed to both a better morphology of the semiconductor film, resulting in an increased channel mobility, and to easier electron injection, which manifests itself through a lowering of the contact resistance. Interestingly, the modulation of the contact resistance exactly follows an opposite behavior to what reported in the case of p-channel devices, which brings further evidence for that charge injection is tuned by the direction and magnitude of the dipole moment of the SAM.

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The systematic measurement of the photoluminescence quantum yield and the recombination lifetime of a given phosphor allows for the quantification of both radiative and non-radiative recombination rates. This analysis therefore separates the two types of phenomena influencing the quantum efficiency of the phosphor. When associated with other materials characterizations, this powerful tool allows for the determination of the relationship between the structural properties and the efficiency of the photoluminescence process. This article presents this method and its direct application to emerging luminescent quaternary semiconductor nanocrystals. First, the direct effect of disorder on non-radiative recombination rate is demonstrated. Then, strong evidence concerning the nature of the donor and acceptor defects involved in the photoluminescence process of these materials are obtained using XPS.

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The precursor (AgIn)x Zn2(1–x)(S2CN(C2H5)2)4 was used to prepared AgInS2–ZnS nanocrystals with different compositions (x = 0.4 and x = 0.7) and with different time of reaction (10 min and 75 min). The photoluminescence features of the nanocrystals were addressed by combining steady‐state spectroscopy and light‐induced electron paramagnetic resonance. Both techniques showed the contribution of at least two components for the emission, previously assigned to surface and intrinsic states. Light‐induced electron paramagnetic resonance allowed detection of the photocreation both of irreversible paramagnetic species that are likely responsible for the nano‐crystals degradation assigned to surface states and of reversible paramagnetic species assigned to intrinsic states. Moreover, reversible bistable paramagnetic states were observed. This Letter provides a scheme that might be useful in addressing the well‐known problem of aging of the nanocrystals. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Increasing solar cell efficiency by using spectral conversion is addressed in this article. To that purpose rare-earth doped YAG nanoparticles exhibiting down-conversion and quantum cutting properties have been prepared. These nanoparticles have been synthesized with different concentrations of dopants in order to optimize the luminescence and the quantum cutting efficiency. Results on the incorporation of selected material into the encapsulating layer of c-Si based PV-modules are also presented. The effect of down-conversion has been demonstrated through the increase of photocurrent of encapsulated silicon solar cells.