Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors

Boudinet, Damien; Benwadih, M.; Qi, Yabing; Altazin, Stéphane; Verilhac, Jean Marie; Kröger, Michael; Serbutoviez, C.; Gwoziecki, R.; Coppard, R.; Blevennec, Gilles Le; Kahn, Antoine; Horowitz, Gilles

doi:10.1016/j.orgel.2009.10.021

Cited by 113 publications

(79 citation statements)

References 33 publications

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“…However, the contact resistance problem arising between organic materials and metal electrodes has been one of the dominant obstacles for adopting organic semiconducting devices instead of silicon‐based devices. Diverse attempts, for instance, self‐assembled monolayer (SAM) treatment on metal electrodes, inserting a charge injection layer between OSC and metals, choice of metals for better injection properties, adopting carbon‐based conductor like graphene as electrodes, have been introduced to improve carrier injection across typically a non‐ohmic contact. Especially, considering large operation voltages required for OFETs, improving contact properties of organic/metal interface is an essential step for practical applications of OSCs.…”

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confidence: 99%

Enhanced Charge Injection Properties of Organic Field‐Effect Transistor by Molecular Implantation Doping

et al. 2019

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memories, and organic field-effect transistors (OFETs), have various advantages including mechanical flexibility, low cost, solution-processed fabrication, and tunable material functionalities by molecular design compared with silicon-based materials. [1][2][3][4][5][6][7][8][9][10][11][12][13] However, the contact resistance problem arising between organic materials and metal electrodes has been one of the dominant obstacles for adopting organic semiconducting devices instead of silicon-based devices. Diverse attempts, for instance, self-assembled monolayer (SAM) treatment on metal electrodes, [14][15][16][17][18][19] inserting a charge injection layer between OSC and metals, [20][21][22][23][24][25][26][27] choice of metals for better injection properties, [28,29] adopting carbon-based conductor like graphene as electrodes, [30] have been introduced to improve carrier injection across typically a non-ohmic contact. Especially, considering large operation voltages required for OFETs, improving contact properties of organic/metal interface is an essential step for practical applications of OSCs.Contact doping is one of the most effective techniques to reduce contact resistance and has been widely employed in silicon-based devices and recently in OSCs to reduce the contact resistance. [31][32][33][34][35][36] In order to avoid undesirable OFF currents, it needs to be performed selectively, i.e., in localized regions at the source-drain contacts only and not in the channel region. The doped regions have been usually confined to the top surface of the OSC film by depositing a small amount of dopants on the top of the organic film by thermal evaporation. As a result, the position of the gate dielectrics was normally restricted to the top side of devices (i.e., FETs in a top-gate structure) in order to enhance the charge injection from metal electrodes to the accumulation layer formed on the top surface of the polymer. [31,32] Recently, the combination of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 -TCNQ) as host and dopant material, respectively, has produced a highly conducting polymer that has been studied as a candidate for a synthetic metal and high power-factor thermoelectric material. [37][38][39][40][41] Interestingly, this combination achieved an efficient bulk-doping of PBTTT by solid-state diffusion which implied that the F 4 -TCNQ Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large-area fabrication. However, OSC devices still have to overcome contact resistance issues for better performances. Because of the Schottky contact at the metal-OSC interfaces, a non-ideal transfer curve feature often appears in the low-drain voltage region. To improve the contact properties of OSCs, there have been several methods reported, including interface treatment by self-assembled monolayers and introducing charge injection layers. Here, a selectiv...

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confidence: 99%

Enhanced Charge Injection Properties of Organic Field‐Effect Transistor by Molecular Implantation Doping

et al. 2019

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“…Currently, most of the published short‐channel OFETs, though showing typical field‐effect behaviour, are contacts limited. There have been a number of reported approaches to reduce R c , including energy level matching by varying the metal electrodes,172–174 control of the interfacial dipoles using thiol‐based self‐assembled monolayers (SAMs),142, 175, 176 incorporation of charge injection interlayers,79, 177–179 and the use of polymer and other carbon nanomaterial‐based electrodes 180–182. The fundamental contact electrode interface physics and chemistry and recent approaches to obtaining optimized charge injection states can be found in a few review articles 171, 183–185…”

Section: Strategies For High‐speed Complementary Circuits Using Pomentioning

confidence: 99%

Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors

2013

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For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order t...

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“…Source and drain electrodes are patterned either by photolithography or by laser ablation. A Self-Assembled Monolayer (SAM) is then deposited to optimize electron injection in the Lowest Unoccupied Molecular Orbital (LUMO) of the N-type organic semiconductor [8]. The N-type OSC (Polyera ActivInk®) is first formed by screen-printing, with a final thickness in the range of 50-200nm.…”

Section: Fig 2 C-otft Cross-section Of the Adopted Technologymentioning

confidence: 99%

Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications

Chartier

Jacob

Charbonneau

et al. 2014

2014 44th European Solid State Device Research Conference (ESSDERC)

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Large area sensing surface have strong interest for many applicative sectors: transport, health, building, industrial, user interface… Printed electronics offers breakthrough technical solutions to fulfill these applications. Indeed printed sensors, addressed by printed oTFT matrix and circuits, heterogeneously connected to classical Silicon microprocessor for the signal processing, offers unreached solutions when multipoint, large area and flexibility are required. Recent developments in printed organic "CMOS" circuits, OTFT backplanes and sensors obtained on PICTIC large area Sheet-To-Sheet printing platform will be presented with vision on future potential applications

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Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors

Cited by 113 publications

References 33 publications

Enhanced Charge Injection Properties of Organic Field‐Effect Transistor by Molecular Implantation Doping

Enhanced Charge Injection Properties of Organic Field‐Effect Transistor by Molecular Implantation Doping

Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors

Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications

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