Method to determine radiative and non-radiative defects applied to AgInS<sub>2</sub>–ZnS luminescent nanocrystals

Chevallier, Théo; Benayad, Anass; Blevennec, Gilles Le; Chandezon, F.

doi:10.1039/c6cp06509k

Cited by 24 publications

(25 citation statements)

References 35 publications

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“…The PL decays of size-selected GSH-stabilized AIS (AIS/ZnS) QDs reveal a distinct multiexponential character (Figure 5a) typical of ternary metal chalcogenides. 1,15,41,[51][52][53]57 The PL decay curves of CIS and AIS QDs are typically fitted with linear combinations of two to three single-exponential functions to derive a weighted average PL lifetime. 15,41,51,52,57 No real physical model of the radiative events in the QDs is assumed in this approach, and the lifetimes of separate fitting components cannot be associated with any specific recombination channel.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Origin and Dynamics of Highly Efficient Broadband Photoluminescence of Aqueous Glutathione-Capped Size-Selected Ag–In–S Quantum Dots

et al. 2018

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The 2–3 nm size-selected glutathione-capped Ag–In–S (AIS) and core/shell AIS/ZnS quantum dots (QDs) were produced by precipitation/redissolution from an aqueous colloidal ensemble. The QDs reveal broadband photoluminescence (PL) with a quantum yield of up to 60% for the most populated fraction of the core/shell AIS/ZnS QDs. The PL band shape can be described by a self-trapped exciton model implying the PL band being a sequence of phonon replica of a zero-phonon line resulting from strong electron–phonon interaction and a partial conversion of the electron excitation energy into lattice vibrations. It can be concluded that the position and shape of the PL bands of AIS QDs originate not from energy factors (depth and distribution of trap states) but rather from the dynamics of the electron–phonon interaction and the vibrational relaxation in the QDs. The rate of vibrational relaxation of the electron excitation energy in AIS QDs is found to be size-dependent, increasing almost twice from the largest to the smallest QDs.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Origin and Dynamics of Highly Efficient Broadband Photoluminescence of Aqueous Glutathione-Capped Size-Selected Ag–In–S Quantum Dots

et al. 2018

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“…The quantum yield of a SPE (excluding substrate effects) is defined as [63][64][65] By comparing the radiative lifetimes with the non-radiative ones shown in Table II for the N B V N defect, we have γ > 98% which shows it has the potential to be a highly efficient quantum emitter. In practice, several other external effects can cause the quantum yield to be substantially lower.…”

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confidence: 99%

Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles

Smart

et al. 2019

Phys. Rev. B

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Identification and design of defects in two-dimensional (2D) materials as promising single photon emitters (SPE) requires a deep understanding of underlying carrier recombination mechanisms. Yet, the dominant mechanism of carrier recombination at defects in 2D materials has not been well understood, and some outstanding questions remain: How do recombination processes at defects differ between 2D and 3D systems? What factors determine defects in 2D materials as excellent SPE at room temperature? In order to address these questions, we developed first-principles methods to accurately calculate the radiative and non-radiative recombination rates at defects in 2D materials, using h-BN as a prototypical example. We reveal the carrier recombination mechanism at defects in 2D materials being mostly dominated by defect-defect state recombination in contrast to defect-bulk state recombination in most 3D semiconductors. In particular, we disentangle the non-radiative recombination mechanism into key physical quantities: zero-phonon line (ZPL) and Huang-Rhys factor. At the end, we identified strain can effectively tune the electron-phonon coupling at defect centers and drastically change non-radiative recombination rates. Our theoretical development serves as a general platform for understanding carrier recombination at defects in 2D materials, while providing pathways for engineering of quantum efficiency of SPE. † FW and TJS contributed equally to this work.

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“…This reduction on PL intensities is related to the formation of electronic states density within the band gap due to orderdisorder effects, which is clearly observed in Raman analysis. These structural distortions on [TiO 6 ] provides a high density of energies states that might contribute to non-radiative emission due to low energy difference between these levels, thus reducing the contribution of radioactive emission and hence the PL signal [48].…”

Section: Photoluminescence (Pl)mentioning

confidence: 99%

Electrosteric colloidal stabilization for obtaining SrTiO3/TiO2 heterojunction: Microstructural evolution in the interface and photonics properties

Amoresi

Teodoro

Teixeira

et al. 2018

Journal of the European Ceramic Society

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Researches on solids heterojunctions has proven to be an important field for technological applications due to synergism achieved by interface phenomena. In this work, we present an understanding of SrTiO 3 /TiO 2 interface and its effects on structural and microstructural characteristics, and relate them to photoluminescence properties of heterojunctions obtained by a simple method. It was observed that SrTiO 3 proportion directly influences the structural order-disorder, as observed by X-Ray diffraction, Raman spectroscopy and Transmission electron microscopy. Photoluminescence behavior of heterojunction with 1% of SrTiO 3 showed a shift to blue emission region compared to TiO 2 , and enhanced of emission intensity compared to SrTiO 3 , resulted from defects generated by interface effects, attracting possible applications on selective color emitter. Therefore, we conclude that in same materials phases, nature and concentration of structural defects has strong dependence of SrTiO 3 concentration, which leads to different photoluminescence properties.

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Method to determine radiative and non-radiative defects applied to AgInS₂–ZnS luminescent nanocrystals

Cited by 24 publications

References 35 publications

Origin and Dynamics of Highly Efficient Broadband Photoluminescence of Aqueous Glutathione-Capped Size-Selected Ag–In–S Quantum Dots

Origin and Dynamics of Highly Efficient Broadband Photoluminescence of Aqueous Glutathione-Capped Size-Selected Ag–In–S Quantum Dots

Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles

Electrosteric colloidal stabilization for obtaining SrTiO3/TiO2 heterojunction: Microstructural evolution in the interface and photonics properties

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Method to determine radiative and non-radiative defects applied to AgInS2–ZnS luminescent nanocrystals

Cited by 24 publications

References 35 publications

Origin and Dynamics of Highly Efficient Broadband Photoluminescence of Aqueous Glutathione-Capped Size-Selected Ag–In–S Quantum Dots

Origin and Dynamics of Highly Efficient Broadband Photoluminescence of Aqueous Glutathione-Capped Size-Selected Ag–In–S Quantum Dots

Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles

Electrosteric colloidal stabilization for obtaining SrTiO3/TiO2 heterojunction: Microstructural evolution in the interface and photonics properties

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Method to determine radiative and non-radiative defects applied to AgInS₂–ZnS luminescent nanocrystals