Influenza virus infection triggers host innate immune response by stimulating various pattern recognition receptors (PRRs). Activation of these PRRs leads to the activation of a plethora of signaling pathways, resulting in the production of interferon (IFN) and proinflammatory cytokines, followed by the expression of interferon-stimulated genes (ISGs), the recruitment of innate immune cells, or the activation of programmed cell death. All these antiviral approaches collectively restrict viral replication inside the host. However, influenza virus also engages in multiple mechanisms to subvert the innate immune responses. In this review, we discuss the role of PRRs such as Toll-like receptors (TLRs), Retinoic acid-inducible gene I (RIG-I), NOD-, LRR-, pyrin domain-containing protein 3 (NLRP3), and Z-DNA binding protein 1 (ZBP1) in sensing and restricting influenza viral infection. Further, we also discuss the mechanisms influenza virus utilizes, especially the role of viral non-structure proteins NS1, PB1-F2, and PA-X, to evade the host innate immune responses.

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We report the fabrication of binder-free, low-cost and efficient hybrid supercapacitive electrode based on the hexagonal phase of two-dimensional MoS 2 nanoworms reinforced with molybdenum nitride nanoflakes deposited on stainless steel (SS) substrate using reactive magnetron sputtering technique. The hybrid nanostructured MoS 2 -Mo 2 N/SS thin film working electrode delivers a high gravimetric capacitance (351.62 F g −1 at 0.25 mA cm −2 ) investigated in 1 M Na 2 SO 4 aqueous solution. The physisorption/intercalation of sodium (Na + ) ions in electroactive sites of MoS 2 -Mo 2 N composite ensures remarkable electrochemical performance. The deposited porous nanostructure with good electrical conductivity and better adhesion with the current collector demonstrates a high-energy density of 82.53 Wh kg −1 in addition to a highpower density of 24.98 kW kg −1 . Further, excellent capacitance retention of 93.62% after 4000 galvanostatic charge-discharge cycles elucidated it as a promising candidate for realizing highperformance supercapacitor applications.

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Single crystalline α- and γ-MnS thin films have been deposited on Si and ITO substrates by reactive DC sputtering (Ar:H2S 2:1) of a manganese target for electrochemical energy storage application. We found that working pressure was one of the major parameters while optimizing the crystallinity of thin films, whereas the phase tuning (γ to α) was primarily controlled by temperature variations. The temperature was varied from RT to 450 °C, keeping the gas pressure constant at 10 mTorr optimized value, resulting in a transition between two different polymorphs of MnS as confirmed by XRD results. AFM and contact angle measurements were also performed to study the surface roughness, wetting properties, and surface energy calculations of prepared thin films. α-MnS films prepared at 400 °C were found to have a maximum contact angle of 118° and a minimum free surface energy (γSV) of 8.38 mN/m. Moreover, we have also studied the phase dependent electrochemical properties and found that γ-MnS thin films prepared at ambient substrate temperature displayed the highest specific capacitance of 178.3 F/g at a scan rate of 5 mV/s with superior charge-discharge rates in neutral electrolytes. As the substrate temperature was increased to 300 °C, we observed a continuous decrease in the respective specific capacitance values, and α-MnS electrodes were found to have a minimum specific capacitance of 120 F/g. The enhanced electrochemical performance of γ-MnS thin films can be attributed to the superior water interacting properties (θw = 90.4°) and its wurtzite structure, which enables easy penetration of electrolytes into the active materials.

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