Effect of annealing parameters on optoelectronic properties of highly ordered ZnO thin films

Malik, Gaurav; Mourya, Satyendra; Jaiswal, Jyoti

doi:10.1016/j.mssp.2019.04.032

Cited by 70 publications

(28 citation statements)

References 63 publications

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“…8(b), O1s peak of oxygen in wurtzite ZnO lattice should typically be at around 529.8-529.9 eV [24][25][26][27]. Therefore, the peak at 530.0 eV with slight shift should be attributed to oxygen of Zn−O in ZnO lattice accompanying with small part of Zn−O vacancy at the inner surface, that is in accordance to the XPS spectra of Zn2p 3/2 [28][29][30]. In addition, the O1s peak at 531.7 and 531.9 eV normally associates to oxygen of surface adsorbed hydroxy group -OH and zinc hydroxide Zn(OH) 2 [24,[31][32][33][34][35][36].…”

Section: Discussionsupporting

confidence: 66%

Photoluminescence and X-ray photoelectron spectroscopic study of milled-ZnO material prepared by high energy ball milling technique

Mekprasart¹,

Ravuri²,

Yimnirun³

et al. 2020

ScienceAsia

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Luminescence properties that are correlated to near band edge emission and defect-related emission of milled zinc oxide (ZnO) powder prepared by high energy ball milling technique are investigated. Commercial ZnO powder (particle size of 525 nm) was chosen as starting material in milling process to produce ultrafine ZnO powder. The milling process was carried out at different speeds; 0, 200, 400 and 600 rpm for 10 min. After milling at high speed, change in color of milled ZnO powder was clearly observed that could be due to the defects in ZnO structure induced by mechanical strain during milling process. Surface morphology of milled ZnO powder was monitored by field-emission scanning electron microscopy (FESEM). Element component and surface chemical states of the samples were analyzed by X-ray photoelectron spectroscopy (XPS). Optical property of milled samples was investigated by diffuse reflectance UV-Vis spectrometer. Meanwhile, room-temperature photoluminescence spectroscopy of the milled samples was performed. The milled ZnO particle size was distinctly decreased to ca. 200 nm affirmed by FESEM images. Photoluminescence (PL) spectra of milled ZnO sample showed two prominent emission bands; UV and visible region. Visible emission intensity increased with increasing milling speed that would be attributed to greater structural defects caused by high mechanical strain during milling process.

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Section: Discussionsupporting

confidence: 66%

Photoluminescence and X-ray photoelectron spectroscopic study of milled-ZnO material prepared by high energy ball milling technique

Mekprasart¹,

Ravuri²,

Yimnirun³

et al. 2020

ScienceAsia

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“…Zinc oxide (ZnO) is one of the most widely researched semiconductor oxides, owing to its many versatile and attractive properties, such as high chemical and thermal stability, non-toxicity [1], ease of preparation, tunable direct wide band gap (3.4 eV), and high transparency in the visible region [2]. These properties saw ZnO thin films fabricated for various industrial applications, e.g., in optoelectronic devices [3], lasers, gas sensors, and ultraviolet (UV) light emitters [4], and as protective surface coatings [5]. ZnO plays important roles in a number of solar cell systems, such as silicon-based solar cells (first-generation), thin films (second generation), and organic multi-junction, dye-sensitized (third-generation) systems, either as a transparent conductive oxide (TCO) or as a junction for exciton separation [6].…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of ZnO Thin Films Prepared by Molecular Precursor and Sol–Gel Methods

et al. 2020

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Zinc oxide (ZnO) is a versatile and inexpensive semiconductor with a wide direct band gap that has applicability in several scientific and technological fields. In this work, we report the synthesis of ZnO thin films via two simple and low-cost synthesis routes, i.e., the molecular precursor method (MPM) and the sol–gel method, which were deposited successfully on microscope glass substrates. The films were characterized for their structural and optical properties. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for piezoelectric applications. The surface roughness derived from atomic force microscopy (AFM) analysis indicates that films prepared via MPM were relatively rough with an average roughness (Ra) of 2.73 nm compared to those prepared via the sol–gel method (Ra = 1.55 nm). Thin films prepared via MPM were more transparent than those prepared via the sol–gel method. The optical band gap of ZnO thin films obtained via the sol–gel method was 3.25 eV, which falls within the range found by other authors. However, there was a broadening of the optical band gap (3.75 eV) in thin films derived from MPM.

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“…Zinc oxide (ZnO) is an important semiconductor with broad applications in technological devices such as solar cells, optical filters, and gas sensors, among many others [1][2][3]. Processed as thin films and coatings, ZnO is widely studied for applications in optoelectronics [4][5][6][7]. To enhance material performance in such applications, the study of its elastic and optical properties is of paramount importance.…”

Section: Introductionmentioning

confidence: 99%

“…To enhance material performance in such applications, the study of its elastic and optical properties is of paramount importance. In this sense, in the last decade many experimental investigations have addressed the different structural and optical properties of pure and doped ZnO systems [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. As a general remark, these investigations frequently report how the material band gap energy (E g ) and its elastic moduli depend on different parameters related to the processing method.…”

Section: Introductionmentioning

confidence: 99%

Experimental and ab initio study of the structural and optical properties of ZnO coatings: Performance of the DFT+U approach

Apaolaza

Richard

Tejerina

2020

PAC

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In this work, ZnO coatings were produced by the spray-pyrolysis technique and characterized by scanning electron microscopy, X-ray diffraction and optical transmittance spectroscopy. The experimental results were compared to predictions obtained from electronic-structure calculations based on the Density Functional Theory plus U (DFT+U) approach. To this purpose, the 2H, 4H and 6H polytypes of ZnO were theoretically analysed, and DFT+U was assessed for the calculation of structural, electronic and optical properties of the hexagonal ZnO structures. We found that DFT+U is an effective and accurate method that combined with experimental measurements, allows a deeper insight about the coatings of the wurtzite (2H) phase synthesized in the laboratory. This comprehensive study of the pure ZnO is the first step towards the study of more complex ZnO-based coatings.

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Effect of annealing parameters on optoelectronic properties of highly ordered ZnO thin films

Cited by 70 publications

References 63 publications

Photoluminescence and X-ray photoelectron spectroscopic study of milled-ZnO material prepared by high energy ball milling technique

Photoluminescence and X-ray photoelectron spectroscopic study of milled-ZnO material prepared by high energy ball milling technique

Structural and Optical Properties of ZnO Thin Films Prepared by Molecular Precursor and Sol–Gel Methods

Experimental and ab initio study of the structural and optical properties of ZnO coatings: Performance of the DFT+U approach

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