In this paper we report on the magnetic properties of pure bulk ferromagnetic graphite, obtained by a chemical route previously described. This magnetic graphite has been obtained by a vapor reaction consisting of a controlled etching on the graphite structure. By magnetic force microscopy we have verified that its magnetic properties are related to the topographic defects introduced in the pristine material. Also, the magnetic properties have been verified through magnetization measurements as a function of temperature and applied magnetic field. At low temperatures ͑2 K͒ the saturation magnetization reaches a value of 0.58 emu/ g, leading to a defect concentration of 1250 ppm. The system is highly irreversible due to the inhomogeneity of the distribution of defects in the material. Two transition temperatures are detected, T c1 = 115͑5͒ K and T c2 = 315͑5͒ K. These transitions could be associated to the weak coupling between ferromagnetic regions related to defects and to the ferromagnetism inside the defect regions.

We present an experimental study of InAs/ AlAs͑GaAs͒ periodical structures with InAs and AlAs quantum dots by means of Raman spectroscopy. Experiments on the asymmetric GaAs/ InAs/ AlAs quantum dot structures allowed us to investigate the interface phonons localized in the vicinity of corrugated dot/matrix interface and planar interface between the matrix and wetting layer. The interface phonon frequencies in the quantum dot structures determined from the experiment are compared to those calculated in the framework of the dielectric continuum model. A good agreement is obtained, especially if the preferential shape of the quantum dots determined from transmission electron microscopy is taken into account.

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We examine the relationship between the transport and magnetic properties of digital ferromagnetic heterostructure superlattices in which 0.5 monolayer MnAs planes alternate with undoped GaAs spacer layers. The data show that as the thickness t of the GaAs spacers increases, charge transport and the Curie temperature both approach their independent-layer limits at comparable values of t. An increase in the per-layer conductivity with decreasing t accompanies a rise in TC. This behavior is consistent with an enhancement of interlayer ferromagnetic interactions by charge coupling across the spacers.

Abstract. The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their topologies show some resemblances. In addition, in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained.

The thermal evolution of a ZnSe epilayer grown by molecular beam epitaxy on GaAs(001) has been studied by high resolution x-ray diffraction as well as photoelectron and Raman spectroscopies. Sequential annealing of a relaxed epilayer reveals a fast migration of Ga towards the ZnSe cap layer with a significant accumulation of As atoms near the ZnSe-reacted interface. A Ga2Se3 compound appears as a predominant byproduct whereas Zn atoms are probably diffusing from the reacted interface into the GaAs substrate.

The localization properties of the single-particle and collective electron excitations were investigated in the intentionally disordered GaAs/AlGaAs superlattices by weak-field magnetoresistance and Raman scattering. The localization length of the individual electron was found to be considerably larger than that of the collective excitations. This suggests that the disorder has a weaker effect on the electrons than on their collective motion and that the interaction which gives rise to the collective effects increases localization.

Ge/Si heterostructures with Ge self-assembled quantum dots (SAQDs) grown at various temperatures by molecular beam epitaxy were investigated using resonant Raman spectroscopy and capacitance measurements. The occurrence of quantum confinement effects was confirmed by both techniques. For the structures grown at low temperatures (300 − 400 • C), the SAQDs optical phonon wavenumbers decrease as the Raman excitation energy is increased; this is an evidence of the scattering sensitivity to the size of the SAQDs and to the inhomogeneity in their sizes. However, the opposite behavior is observed for the SAQDs grown at higher temperatures, as a consequence of the competition between the phonon localization and internal mechanical stress effects. The E 1 electronic transition of the Ge in the SAQDs was found to be shifted towards higher energies as compared to bulk Ge, due to biaxial compressive stress and to the electronic confinement effect present in the structures. The intermixing of Si atoms in the quantum dots was found to be much more significant for the sample grown at higher temperatures. The capacitance measurements, besides confirming the existence of the dots in these structures, showed that the deepest Ge layers lose their 0D signature as the growth temperature increases.