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Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires J. Appl. Phys. 110, 094308 (2011) Study on the structural and physical properties of ZnO nanowire arrays grown via electrochemical and hydrothermal depositions J. Appl. Phys. 110, 094310 (2011) Growth of single-crystalline cobalt silicide nanowires with excellent physical properties J. Appl. Phys. 110, 074302 (2011) General hypothesis for nanowire synthesis. I. Extended principles and evidential (experimental and theoretical) demonstration J. Appl. Phys. 110, 054311 (2011) Thermoelectric properties for single crystal bismuth nanowires using a mean free path limitation model J. Appl. Phys. 110, 053702 (2011) Additional information on J. Appl. Phys. The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence ͑PL͒, and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.

Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions J. Appl. Phys. 110, 094309 (2011) Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si App. Phys. Rev. 2011, 15 (2011 Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si J. Appl. Phys. 110, 081301 (2011) Dielectric effects on the optical properties of single silicon nanocrystals J. Appl. Phys. 110, 074312 (2011) Photoluminescence origins of the porous silicon nanowire arrays J. Appl. Phys. 110, 073109 (2011) Additional information on J. Appl. Phys. The emission energy dependence of the photoluminescence ͑PL͒ decay rate at room temperature has been studied in Si nanoclusters ͑Si-ncl͒ embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Si y O 1−y , y=͑0.36, 0.39, 0.42͒, at various annealing temperatures ͑T a ͒ and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at T a = 900°C and of crystalline Si-ncl for T a = 1000°C and 1100°C. For T a = 1100°C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower T a , the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.

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We study a Al x Ga x−1 As parabolic quantum well ͑PQW͒ with GaAs/ Al x Ga x−1 As square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons distribution over whole parabolic well to independent-layer states with unequal density. The transition occurs in the perpendicular magnetic field at Landau filling factor Ϸ 3 and is signaled by the appearance of the strong and developing fractional quantum Hall ͑FQH͒ states and by the enhanced slope of the Hall resistance. We attribute the transition to the possible electron localization in the x-y plane inside the lateral wells, and formation of the FQH states in the central well of the superlattice, driven by electron-electron interaction.

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