Disorder-driven coherence-incoherence crossover in random GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Al</mml:mi><mml:mn>0.3</mml:mn></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mn>0.7</mml:mn></mml:msub><mml:mi>As</mml:mi></mml:math>superlattices

Pusep, Yu. A.; Ribeiro, Michel Campos; Arakaki, H.; Souza, C. A. de; Malzer, S.; Döhler, G. H.

doi:10.1103/physrevb.71.035323

Cited by 6 publications

(17 citation statements)

References 27 publications

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“…A very similar value of p or L can be found in the SL model as reported earlier where tunnel transport is predominant [13,14]. In that case we attempt to explain the conductivity data using a SL structure in the frame of 3D anisotropic propagative Fermi surface (PFS) model combined with the e-e interaction term [13,14]. This model was originally developed to explain transport in artificial SL having disorder and was recently applied to explain the unusual transport in nano-crystalline silicon films treated as a naturally formed SL [18].…”

Section: (Iii) Weakly Localized Transport In Three Dimensionsupporting

confidence: 84%

“…From this analysis we notice that the temperature dependence of L yields the value of the exponent p ( 0.7) less than unity, which cannot be explained by a 3D isotropic case. A very similar value of p or L can be found in the SL model as reported earlier where tunnel transport is predominant [13,14]. In that case we attempt to explain the conductivity data using a SL structure in the frame of 3D anisotropic propagative Fermi surface (PFS) model combined with the e-e interaction term [13,14].…”

Section: (Iii) Weakly Localized Transport In Three Dimensionsupporting

confidence: 59%

“…3. To observe the signature of 2DWL in conductivity a lnT behavior from these samples is expected but this was not observed for UNCD 20N films, particularly at the low temperature range [13,14]. This non-linear behavior of R(0) vs.…”

Section: (Ii) Weakly Localized Transport In Isotropic Disordered Mate...mentioning

confidence: 90%

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Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

et al. 2010

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We establish the dominant effect of anisotropic weak localization ͑WL͒ in three dimensions ͑3D͒ associated with a propagative Fermi surface on the conductivity correction in heavily nitrogen-doped ultrananocrystalline diamond ͑UNCD͒ films based on magnetoresistance studies at low temperatures. Also, low-temperature electrical conductivity can show weakly localized transport in 3D combined with the effect of electron-electron interactions in these materials, which is remarkably different from the conductivity in two-dimensional WL or strong localization regime. The corresponding dephasing time of electronic wave functions in these systems described as ϳT −p with p Ͻ 1, follows a relatively weak temperature dependence compared to the generally expected nature for bulk dirty metals having p Ն 1. The temperature dependence of Hall ͑electron͒ mobility together with an enhanced electron density has been used to interpret the unusual magnetotransport features and show delocalized electronic transport in these n-type UNCD films, which can be described as lowdimensional superlattice structures.

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Section: (Iii) Weakly Localized Transport In Three Dimensionsupporting

confidence: 84%

Section: (Iii) Weakly Localized Transport In Three Dimensionsupporting

confidence: 59%

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Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

et al. 2010

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“…We note that the electronic properties of disordered SL systems, e.g., GaAs are still under investigation. [15][16][17] Since a unified theoretical model which can explain all anisotropic AMR (h, /, T) features is currently unavailable we solve this problem in two parts: (i) Explaining AMR (h, /) considering anisotropy in the planes normal to the growth direction [ Fig. 1(a)] and (ii) fitting MR (h, T) using a disordered SL for arbitrary h and D (Briksin-Kleinert, B-K model) [ Fig.…”

mentioning

confidence: 99%

“…We offer a SL treatment for the analysis of low temperature dependent conductivity and MR data in frame of 3D WL, 12 which is confirmed by AMR (h, /, T). This model depends on the coupling between layers of SL periods (c) and also on the dwelling time of an electron (s 0 ) in a particular layer [15][16][17][18] [ Fig. 2(a)].…”

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confidence: 99%

Polarization dependent asymmetric magneto-resistance features in nanocrystalline diamond films

Bhattacharyya

Churochkin

2014

Applied Physics Letters

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Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

et al. 2020

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We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of 3D weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as function of temperature, which shows evidence of a power law dependence in good agreement with theory.Electrical measurements were performed on N-UNCD films grown by chemical vapour deposition. These films arXiv:2003.05077v1 [cond-mat.mes-hall]

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Disorder-driven coherence-incoherence crossover in random GaAs/Al0.3Ga0.7Assuperlattices

Cited by 6 publications

References 27 publications

Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

Polarization dependent asymmetric magneto-resistance features in nanocrystalline diamond films

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

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