Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

Mosca, D. H.; Schreiner, W. H.; Kakuno, Edson Massayuki; Mazzaro, I.; Silveira, Eduardo; Etgens, V. H.; Eddrief, M.; Zanelatto, G.; Galzerani, J. C.

doi:10.1063/1.1504175

Cited by 12 publications

(7 citation statements)

References 30 publications

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“…4,18 ͑At room temperature, the lattice mismatch is 0.27%. 19 ͒ The vertical lattice constant versus layer thickness, plotted in the inset of Fig. 4, illustrates how RIX allows us to derive the total thickness-dependent strain development from one single sample, avoiding the reproducibility problem traditionally associated with measuring various samples, as conventionally reported in the literature.…”

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confidence: 96%

Real-time in situ x-ray diffraction as a method to control epitaxial growth

Bader

Faschinger

Schumacher

et al. 2003

Applied Physics Letters

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We developed a real-time in situ x-ray Bragg diffraction technique for monitoring epitaxial growth. In our setup, the x-ray diffraction requirement of an extremely exact sample adjustment and an angular scan of sample and detector are circumvented by using a slightly divergent x-ray beam and observing an extremely asymmetric Bragg reflection with a multichannel detector. The angular range covered by the stationary multichannel detector corresponds nearly exactly to the qz interval of a conventional ω−2θ scan. The technique is demonstrated by monitoring the molecular-beam epitaxial growth of a ZnSe epilayer on (001)GaAs. The exposure time of each diffraction pattern is only a few seconds, which enables a real-time x-ray diffraction monitoring of the epitaxial growth process.

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confidence: 96%

Real-time in situ x-ray diffraction as a method to control epitaxial growth

Bader

Faschinger

Schumacher

et al. 2003

Applied Physics Letters

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“…The ZnSe/GaAs(001) system has been subject of many Raman studies, which focus to various aspects, such as e.g. the reactivity of the interface , the analysis of compound formation, microstrain , strain profiles , disorder , growth mechanism in atomic layer epitaxy , precursor dependence in MOVPE , in situ growth monitoring , post‐growth annealing effects , electronic band bending and electric fields , interfacial charge carriers in nominally undoped samples , and the generation of photo‐carriers by laser irradiation .…”

Section: Resultsmentioning

confidence: 99%

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Geurts

2014

Phys. Status Solidi B

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This review focuses on the analysis of buried semiconductor interfaces by Raman spectroscopy, i.e. inelastic light scattering. Simultaneous access to structural and electronic properties can be obtained by employing phonon Raman scattering, induced by deformation potential, or alternatively by the electric-field induced Fröhlich mechanism, as well as Raman scattering from coupled plasmon-LO-phonon modes. Structural information may comprise intermixing, reactivity, strain and interfacial atomic bond sequences. The main electronic properties derived from Raman spectroscopy are the doping levels of the constituent layers, the interfacial electric field strengths and the free-carrier depletion layer widths. Attention is paid also to the possibility of in situ growth monitoring by Raman spectroscopy. Examples of semiconductor interface analysis are presented for heterovalent interfaces between II-VI and III-V semiconductors, especially ZnSe/GaAs(001) and CdTe/ InSb(001), as well as for heavily strained CdTe monolayers, embedded in a BeTe epilayer on GaAs(001).

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“…[12][13][14][15][16][17][18][19][20][21][22][23][24][25] On the free GaAs͑100͒ surface, this ␤2 structure is characterized by two As dimers in the top layer and one Ga dimer vacancy in the second layer that exposes a third As dimer in the third layer. Therefore, it is of practical interest to investigate those interfaces that might reasonably arise from real substrate surface structures.…”

Section: Results: Anion Interfacesmentioning

confidence: 99%

Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

Farrell

LaViolette

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In 0.04 Ga 0.96 As (001) heterojunctions J.We extended our study of heterovalent interfaces between ZnSe͑100͒ and GaAs͑100͒ in superlattices using first-principles, density-functional theory calculations. Here, we concentrate on the changes in interfacial binding energy that occur when the stoichiometry is varied in the anion layer adjacent to the interface. This follows earlier work where the cation stoichiometry was varied. We studied three general categories of simple heterojunctions: those with only As-Zn bonding, those with only Se-Ga bonding, and those with mixed As-Zn and Se-Ga bonding. We also considered more complex interface configurations. Several different variations in interfacial stoichiometry that are conceptually based on the heteroepitaxial growth of ZnSe͑100͒ on the GaAs͑100͒͑2 ϫ 4͒␤2 surface structure were studied. In addition, the effects induced by the presence of vacancies in the vicinity of the surface were investigated. These more complex interfaces are discussed in terms of published experimental results. Finally, the possibility that the energy of the interface can be described in terms of the energy of the bonds that span that interface was also examined. We find that, for all of the 14 interfaces studied, the interface energy can be expressed as a simple sum of the per-bond-pair energies with an average error of less than 3%. Therefore, in these systems, the energies of the interfacial bonds are "additive" to a good approximation.

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Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

Cited by 12 publications

References 30 publications

Real-time in situ x-ray diffraction as a method to control epitaxial growth

Real-time in situ x-ray diffraction as a method to control epitaxial growth

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

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