Transparent electrically conducting SnO2 films were prepared by the chemical vapour deposition technique. The films were deposited at substrate temperatures of 400, 450 and 500 degrees C by stannous chloride oxidation. The optical absorption studies, using unpolarised light, indicated that the deposition temperature is an important parameter influencing the optical properties of the films. The absorption edge for the films occurs at about 3.7 eV. The films also indicated direct transitions at about 3.95 eV and indirect transitions at about 3.27 eV.

Transparent electrically conducting SnO2 films were prepared by chemical vapour deposition technique. The films were obtained at various deposition temperature ranging from 350 to 500 degrees C by stannous chloride oxidation. The SnO2 films thus produced have a conductivity of 50-700 (ohm cm)-1, an n-type carrier concentration of 1*1019-6*1020 cm-3 and a Hall mobility of 7.8-31.2 V-1 s-1 depending on the deposition conditions. The studies on the variation of conductivity with temperature indicated two donor activation energies for the films.

Transparent conducting tin oxide films were prepared by a chemical vapour deposition technique. The films were deposited at substrate temperatures of 400, 450 and 500 degrees C. The films were annealed (above the deposition temperatures) up to 1000 degrees C in various gas atmospheres (argon, oxygen, nitrogen and air). It is observed that there is an initial decrease in resistivity up to a temperature of 700 degrees C which is followed by an increase in resistivity beyond 700 degrees C. X-ray and electron diffraction studies have been carried out on the annealed films and the behaviour of this decrease and increase in resistivity has been explained.

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