Chemical vapour deposition of tin oxide films and their electrical properties

Abstract

Transparent electrically conducting SnO2 films were prepared by chemical vapour deposition technique. The films were obtained at various deposition temperature ranging from 350 to 500 degrees C by stannous chloride oxidation. The SnO2 films thus produced have a conductivity of 50-700 (ohm cm)-1, an n-type carrier concentration of 1*1019-6*1020 cm-3 and a Hall mobility of 7.8-31.2 V-1 s-1 depending on the deposition conditions. The studies on the variation of conductivity with temperature indicated two donor activation energies for the films.

Studies on undoped SnO2 thin film deposited by chemical reactive evaporation method

“…The decrease in sheet resistance due to increase in substrate temperature have also been reported by other workers [18,19]. This might be due to increase in carrier concentration.…”

Laser direct write patterned indium tin oxide films for photomasks and anisotropic resist applications

“…The sample film was 10% Sn with thickness of 120 nm and exposed by laser of 0.4 W. The sample current was 4 mA with the magnetic field strength of 5kG. The results gave the Hall mobility around 5.8 cm 2 / V·S and the carrier concentration was in the range of 7x 10 18 cm -3 to 1x 10 20 cm -3 depending on the laser power and Sn ratio, which is close to the values of ITO film deposited by CVD [13].…”

Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

“…These techniques have the capability to produce dense films of insulating and conductive materials, and film stoichiometry is easily controlled by varying the oxygen flow rate. Because of the number of deposition techniques and conditions, large variations in the electrical properties have been reported for SnO 2 films [13][14][15][16][17]. In polycrystalline thin films, carrier concentrations as high as 10 21 cm −3 have been reported [14,15], but the mobility was lower than single crystal films [13], typically in the range of 1 cm 2 /Vs to 30 cm 2 /Vs.…”

“…Some study at lower deposition temperatures (130°C to 150°C) have showed a high conductivity of 400 Ω −1 cm −1 , but the film did not have any amorphous phases [12]. A higher carrier concentration of 6 × 10 20 cm −3 and a good conductivity of 700 Ω −1 cm −1 can be obtained for tin oxide films, but typically deposited at a high temperature [17].…”