Studies on undoped SnO2 thin film deposited by chemical reactive evaporation method

Yadav, J.B.; Patil, Rahul B.; Puri, Rajeev K.; Puri, Vijaya

doi:10.1016/j.mseb.2007.01.032

Cited by 35 publications

(24 citation statements)

References 17 publications

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“…The extrapolation of the straight-line portion to zero absorption coefficient (a = 0) leads to the estimation of band gap energy, this band gap found to be about 3.54 eV. This result is conditional with many other workers (Roman 2006;Yadav et al 2007;Mohammed Khalid 2005).…”

Section: Atomic Force Microscope (Afm)supporting

confidence: 84%

Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

et al. 2013

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Transparent and conducting SnO 2 thin film has been produced on (quartz, ITO, silicon and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600°C oxidation temperature and different oxidation time. The structural, optical, electrical properties, scan electron microscope and atomic force microscope of the prepared films were studied. The transmittance T in the visible and NIR was investigated; the allowed direct energy gap was determined to be 3.18 eV at optimum condition of 600°C and 90 s. The dependence of the resistivity on the film thickness and oxidation time has been studied. The optimum thickness of high transmittance and lowest resistivity is about 150 nm for SnO 2 , where q = 1.7 9 10 -3 X cm and T = 88 %. The sensitivity behaviors of the n-SnO 2 /p-PSi/c-Si-based gas sensor to H 2 and CO 2 gas were investigated. The film sensitivity dependence on the temperature and test gas concentration was tested and the optimum operation temperature was determined at around 250 and 300°C with an applied voltage was constant at 2.5 V.

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Section: Atomic Force Microscope (Afm)supporting

confidence: 84%

Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

et al. 2013

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“…The adhesion of crystalline SnO 2 films is >300 kgF/cm 2 , as measured by the pull-off method [62]. It can be further increased with higher substrate temperatures during deposition and with post-deposition annealing.…”

Section: Mechanical Properties and Corrosion Behaviormentioning

confidence: 96%

Transparent Conducting Oxides Based on Tin Oxide

Kykyneshi

Jian-ping²,

Cann³

2010

Handbook of Transparent Conductors

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Tin oxide (SnO 2 ) is an important and widely used wide band-gap semiconductor and is part of a family of binary transparent conducting oxides (TCO), such as Snand ZnO-doped In 2 O 3 (ITO, ZIO) [1] and ZnO:Al [2], CdO. It is of great interest in corrosive environment applications due to its high stability. This includes applications such as batteries, low emission windows coatings, solar cells, etc. In this chapter we will introduce the structural, electrical and optical properties of undoped and doped tin oxides. In addition, thin films via various deposition methods are discussed. Crystal StructureTin oxide (SnO 2 ) occurs in nature as the mineral Cassiterite. It possesses the rutile crystal structure with a tetragonal unit cell (P4 2 /mnm) and a ¼ b ¼ 4. 738 Å and c ¼ 3.188 Å [3]. Many other metal dioxides share this structure such as TiO 2 , PbO 2 , TaO 2 , TeO 2 , and RuO 2 . The crystal lattice of SnO 2 is shown in Fig. 6.1a, where the sixfold coordination of the Sn atoms to the oxygen nearest neighbors can be observed.The formal atom positions in RX 2 are described as:R : ð2aÞ 000; 1 = 2 1 = 2 1 = 2 X : ð4fÞ AE uu0; u þ 1 = 2 ; 1 = 2 À u; 1 = 2 ð Þ

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“…However, these techniques are either complex or require expensive starting materials. As an alternative, Yadav et al [16] proposed a method for the preparation of SnO 2 nanostructured film, in which SnCl 2 is vaporised in one place, and the vapour is oxidised on a substrate downstream from the flow gas, according to…”

Section: Introductionmentioning

confidence: 99%

Thermokinetic characterisation of tin(II) chloride

Kamali

2014

J Therm Anal Calorim

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Thermokinetic behaviour of SnCl 2 was investigated using differential scanning calorimetry and thermogravimetry techniques under non-isothermal conditions in air, complemented by electron microscopy and Raman spectroscopy. According to the results obtained, the oxidation of SnCl 2 at the heating rates of 5 and 100°C min -1 leads to the in situ formation of highly crystalline SnO 2 nanostructures in the form of nanoparticles and nanorods, respectively. The oxidation of SnCl 2 was found to be a liquid-solid (LS) phase transition at the heating rates equal or lower than 10°C min -1 and a gas-solid phase transition at the heating rates equal or greater than 20°C min -1 . The activation energy of melting, vaporisation and LS oxidation of SnCl 2 was determined to be 198, 93 and 91 kJ mol -1 , respectively.

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Studies on undoped SnO2 thin film deposited by chemical reactive evaporation method

Cited by 35 publications

References 17 publications

Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

Transparent Conducting Oxides Based on Tin Oxide

Thermokinetic characterisation of tin(II) chloride

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